Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal MoS₂ grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise follows an empirical formulation of mobility fluctuations with Hooge's parameter ranging between 1.44×10^-3 and 3.51×10^-2. Small variation of Hooge's parameter suggests superior material uniformity and processing control of CVD grown MoS₂ devices than reported single-layer MoS₂ FET. The extracted Hooge's parameter is one order of magnitude lower than CVD-grown graphene. The Hooge's parameter shows an inverse relationship with the field mobility.