Paper Titles

Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon
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Contactless Photothermal Ionization Spectroscopy of Shallow Defects in Semiconductors
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Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon
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Detection of Nonradiative Transition in P⁺⁺ Ion Implanted p-Si by a Photoacoustic Spectroscopy
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DLTS of Recombination Centres in Semiconductors
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Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
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A Model for Anharmonic Vibrational Excitation of <111>-Bond-Interstitial Impurities in Si and Ge Crystals
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Reactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: Si
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Defect Concentration Gradients at Semiconductor Junctions
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147DLTS of Recombination Centres in Semiconductors

DLTS of Recombination Centres in Semiconductors

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1381-1386

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1381

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Online since:

October 1993

Authors:

Tomas Markvart, D.P. Parton, J.W. Peters, Arthur F.W. Willoughby

Keywords:

Defect, DLTS, Recombination

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Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

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