Results 201 to 210 of about 14,867 (279)

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez   +10 more
wiley   +1 more source

Non-analog environments supported early <i>Homo sapiens</i> in southern Africa 200 000 years ago. [PDF]

open access: yesCommun Earth Environ
Ecker M   +9 more
europepmc   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

open access: yesAdvanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg   +7 more
wiley   +1 more source

Light hydrogen isotopes in terrestrial core. [PDF]

open access: yesSci Adv
Zhang Y, Wang W, Deng Z, Wu Z, Chen B.
europepmc   +1 more source

Dual‐Defect‐Engineered Zinc Oxynitride Thin‐Film Transistors Enabling Electrostatic Current Balancing in Geometrically Symmetric Oxide Logic

open access: yesAdvanced Electronic Materials, EarlyView.
Dual‐defect engineering controls subgap states in zinc oxynitride (ZnON) thin‐film transistors, yielding a field‐effect mobility of 26.58 cm2 V−1 s−1. A process‐associated threshold‐voltage shift is repurposed within a dual‐gate depletion‐mode load to electrostatically balance current in a geometrically symmetric NMOS inverter.
Seung Min Lee   +10 more
wiley   +1 more source

Cumulative‐Stress‐Resilient Microelectromechanical Switches for Extreme Environment Applications

open access: yesAdvanced Electronic Materials, EarlyView.
A microelectromechanical switch combines a thermomechanically stable suspended structure with radiation‐tolerant materials to preserve operation under cumulative shock (2900 g), vibration (2000 Hz), gamma irradiation (1 Mrad), extreme temperatures (4–450 K), and proton irradiation (100 MeV, 1012 p/cm2).
So‐Young Lee   +9 more
wiley   +1 more source

Assessing Mesoscale Heterogeneities in Hard Carbon Electrodes Through Deep Learning‐Assisted FIB‐SEM Characterization, Manufacturing and Electrochemical Modeling

open access: yesAdvanced Energy Materials, EarlyView.
A combination of discrete and finite element method models for the current collector deformation and electrochemical performance analysis, respectively. The models are calibrated and validated with electrochemical and imaging data of hard carbon electrodes. These electrodes were manufactured with different parameters (slurry solid contents of 35 and 40
Soorya Saravanan   +12 more
wiley   +1 more source

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