Results 1 to 10 of about 1,394 (140)
Electrical response and pore structure evolution affected by cyclical plasma breakdown [PDF]
, 2023 Artificial improvement of coal seam permeability is the key to solve the low gas drainage efficiency and prevent gas dynamic disaster. Plasma based on physical discharge is one of the effective means of coal seam antireflection. However, previous studies
Baiquan LIN +3 more
core +1 more source
Discharge characteristics and discharge simulation model of long air gaps containing a floating conductor [PDF]
, 2022 Long air gaps containing a floating conductor are common insulation types in power grids. During the transmission line live-line work, the process of lineman entering the transmission line air gap constitutes a live-line work combined air gap, which is a
Gao, Jiachen <1995>
core +1 more source
Gaoya dianqi, 2021 针对GIS耐压试验击穿故障精确定位比较困难的问题;文中在分析GIS耐压击穿时特征信号特性的基础上,结合信号采集、无线传输、智能分析技术,设计一套GIS耐压击穿故障无线定位系统。该系统通过无线自组网的形式,将击穿时刻的特征信号以无线的方式上传至系统数据服务器进行数据分析,并计算击穿故障点精确的位置;同时系统具有较强的抗干扰性、稳定的无线通信等优点。经现场应用,能够准确定位出GIS耐压击穿的故障点。
贺振华 +5 more
doaj
The Led Ceiling Light Of IR Control Dimming CCT And Lighting [PDF]
, 2015 随着科技水平的提高和能源问题的不断加剧，节能环保成为了新时代各国发展的一个主题。LED作为一种新型节能高效的环保光源，在越来越多的领域展现了其优异的应用特性，受到了各国政府的重视，特别是LED用来做照明灯具,其投入的力度越来越大，LED的发光效率的飞速提高昭示着第四代照明光源正在不断发展。 本文创新点是基于传统的红外控制信号通过软件算法进行调光调色，主要特点：第一在调光时保持色温不变，在调色时保持亮度恒定，而且在调节时不管是色温还是亮度会渐变到当前档，不会出现突变，给人眼一个适应的过程 ...
曾梅真
core
Study on Single-event Gate Rupture Mechanism of Asymmetric-trench SiC MOSFET [PDF]
The demand for kilovolt-level radiation-hardened SiC devices in modern spacecraft is urgent. To provide a theoretical basis for the hardening design of SiC MOSFETs against single-event gate rupture (SEGR), a study on the single-event effects of 1 200 V ...
WANG Lihao1, 2, DONG Tao2, FANG Xingyu2, QI Xiaowei2, WANG Liang2, CHEN Miao2, ZHANG Xing1, ZHAO Yuanfu2
core +1 more source
An Analysis of GATs Compatibility Between High Current Gain and High Avalanche Breakdown Voltage [PDF]
, 2000 【中文摘要】 通过作者最近建立的关于电力半导体器件 GAT的集电结耗尽层电位分析和电场分布的二维解析模型定量研究了 GAT的雪崩击穿特性 ,并且定量解释了该器件实现高击穿电压与高电流增益兼容的实验结果。 【英文摘要】 By the aid of the two dimensional analytical model [5] of the electric potential and field distribution in power semiconductor GATs collector ...
庄宝煌 +3 more
core
高压功率MOSFET结终端保护技术及其组合优化设计 [PDF]
, 2006 场板与场限环是用来提高功率MOSFET抗电压击穿能力的常用结终端保护技术,文章将分别介绍场板与场限环结终端保护技术各自的特点和耐压敏感参数,通过场板和场限环的互补组合来优化设计一款高耐压的VDMOS器件结构,最后采用ATHENA(工艺模拟)和ATLAS(器件模拟 ...
李开航, 郭东辉, 陈利
core
, 2006 利用RESURF与场板结构结合的技术,设计了一种可以兼容低压BiCMOS工艺的LD-MOS器件。该器件的漂移区长度l≤60μm,就可实现600 V以上的耐压,适用于高低压单片集成电路芯片开发。基于一款荧光灯交流电子镇流器驱动芯片的高低压集成电路功能及其器件耐压要求,介绍了该LDMOS器件的结构和设计方法。采用ATHENA(工艺模拟)和ATLAS(器件模拟)工具,分析优化影响LDMOS器件耐压的关键参数;最后 ...
李开航, 郭东辉, 陈利
core
Experimental study on dynamic response and residual compressive strength of composite sandwich panel with PVC foam core under single-point low-velocity impact [PDF]
ObjectivesIn this paper, an orthogonal braided glass fiber composite sandwich panel with a PVC foam core and dimensions of 150 mm×100 mm×26 mm is selected as the research object in order to study the impact mechanical properties of composite sandwich ...
Chongyi CHEN +6 more
core +1 more source