Results 11 to 20 of about 332,942 (155)

LED管出纤功率与光纤的接续损耗

open access: yesGuangtongxin yanjiu, 1986
本文对发光管的出纤功率、发光管与纤维的接续损耗及光纤之间的接续损耗进行了估算与实际测试,其结果表明两者相当接近,并由此绘出光路上各部分光功率损失分布,便于总体设计及维护检修。
孙振兴
doaj   +2 more sources

单芯电缆耦合电路等效模型及无功损耗影响因素研究

open access: yesGaoya dianqi, 2021
单芯电缆的结构参数和运行环境影响都会导致电缆的无功损耗变化。为了探究单芯电缆结构和运行环境对电缆无功损耗的影响,文中从电缆内部结构出发,建立了电缆等效电路模型。通过分析电缆内部无功损耗形式,研究了单芯电缆在特殊工况下的无功损耗变化情况。结果表明:单端接地电缆内部损耗以容性无功损耗为主;电缆电压等级越高时,输送一定功率的极限传输距离反而越短,并给出了66、110、220、330、500 kV电缆的极限传输距离;电缆内部进水后容性无功损耗会增大10%~30%,电压等级越高或者电缆截面积越大 ...
李瑞芳   +5 more
doaj  

International clinical practice recommendations on the definition, diagnosis, assessment, intervention, and psychosocial aspects of developmental coordination disorder – Chinese (Mandarin) translation

open access: yesDevelopmental Medicine &Child Neurology, Volume 61, Issue 3, Page E1-E35, March 2019., 2019
目的 本国际临床指南由欧洲残疾儿童学会(the European Academy of Childhood Disability,EACD)牵头制定,旨在解决发育性协调障碍(developmental coordination disorder,DCD)的定义、诊断、评估、干预以及与社会心理方面的临床应用关键问题。 方法 本指南针对五个领域的关键问题,通过文献综述和专家团队的正式讨论达成共识。为保证指南的循证基础,以“机制”、“评估”和“干预”为检索词, 对2012年更新以来提出的最新建议以及新增的“社会心理问题”和“青少年/成人”为检索词进行检索。根据牛津大学循证医学中心证据等级 (证据水平 [level of evidence, LOE]1–4) 将结果进行分类,最终转化为指南建议。并由国际 ...
Jing Hua   +6 more
wiley   +1 more source

高压直流输电晶闸管换流阀损耗仿真计算方法研究

open access: yesGaoya dianqi, 2021
准确计算换流阀及其中各类元部件运行损耗,是进行换流阀及其阀冷系统设计的基础。文中在分析换流阀中主要损耗源基础上,建立了晶闸管、电抗器的高精度等效仿真模型,提出了换流阀损耗的仿真计算方法。以此为基础,计算了额定工况下锡盟站换流阀中各主要元部件损耗功率,并将总损耗计算结果与理论计算值及现场测试数据进行了对比分析。结果表明:仿真方法具有较高精度,可被用于换流阀总损耗计算,以及阀内各发热器件的功率计算。
娄彦涛, 袁妮, 刘琦
doaj  

基于ANFIS评估MOV功率损耗

open access: yesDianci bileiqi, 2020
MOV静态下的功率损耗是影响其热稳定的重要因素,在考虑了老化因素对MOV功率损耗的影响后提出了老化程度变量并将其量化的新方法,并利用自适应模糊推理系统(ANFIS)将电压(V)、温度(T)、老化程度(AD)作为网络的输入,实验测量数据作为训练样本对MOV的功率损耗进行评估。研究表明:ANFIS可有效评估MOV的功率损耗,其最大相对误差为8.
牛春霞, 于忠江, 杨仲江
doaj  

Multi‐Walled Carbon Nanotube‐Penetrated Metal–Organic Framework‐Derived TiO2/C 3D Conductive Network Achieves Lightweight, Wide‐Band, Ultra‐Strong Electromagnetic Wave Absorption

open access: yesRare Metals, Volume 45, Issue 5, May 2026.
ABSTRACT In recent years, materials capable of achieving efficient electromagnetic wave (EMW) absorption over a broad frequency range have attracted widespread attention. Such materials are not only significant in mitigating electromagnetic interference and pollution caused by the extensive use of electronic devices but also demonstrate outstanding ...
Maoxia Lu   +7 more
wiley   +1 more source

Improving the Electrochemical Properties of SiOx/Graphite Anode for High‐Performance Lithium‐Ion Batteries by Ultrathin Lithium Film Prelithiation

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT High‐capacity SiOx/graphite (SiO/G) anodes offer great potential for advancing lithium‐ion battery technology; however, their practical application is limited by low initial coulombic efficiency (ICE) and rapid capacity decay. These challenges primarily arise from unstable phase transitions and the formation of the solid electrolyte interphase
Wan‐Xing Zhang   +14 more
wiley   +1 more source

Manipulating Terminal Bonds of Ti3C2Tx MXene for Highly Efficient Microwave Absorption and Photothermal Conversion

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT MXenes have been widely investigated as microwave absorption (MA) materials because of their unique properties. This study introduces a terminal bond manipulation strategy to enhance charge transfer and polarization in Ti3C2Tx, optimizing its MA performance.
Xiang Fang   +8 more
wiley   +1 more source

MXene‐Based Materials: Compositional Engineering for High‐Performance Microwave Absorption

open access: yesRare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The rapid advancement of aerospace and electronic information technologies has imposed increasingly stringent requirements on microwave absorbing materials (MAMs), such as high absorption efficiency, lightweight, and environmental stability, making the development of advanced MAMs urgent for both civilian and national defense applications ...
Pan‐Pan Zhou   +8 more
wiley   +1 more source

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

open access: yesRare Metals, Volume 45, Issue 2, February 2026.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang   +8 more
wiley   +1 more source

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