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Dianci bileiqi通过材料配方中掺杂不同含量的氧化铈（CeO2）探究其对氧化锌压敏电阻的微观形貌、晶粒尺寸、电学性能和大电流冲击测试后退化规律的影响。采用XRD表征了压敏电阻的晶相组成。研究发现，当CeO2掺杂量为0.11wt%时，样品表现出更均匀的晶粒尺寸分布和较优异的电学性能。其电位梯度由未掺杂时的327.8 V/mm提高至349.4 V/mm，非线性系数和残压比分别为60.8和2.408。通过了6次8/20 µs波形下20kA(电流密度6170A/mm2)的脉冲浪涌模拟测试。在经过第10次8/20 ...
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