Results 21 to 30 of about 299,023 (169)

±500kV换流站直流场电场分析及金具表面电场计算

open access: yesDianci bileiqi, 2014
分析了直流和交流电压下绝缘介质内部电场的分布特性。通过支柱绝缘子的二维轴对称模型对比了是否考虑绝缘支柱内部恒定电场情况下,支柱绝缘子均压环表面的电场分布情况。根据对比结果,选择表面场强较大的情况作为直流场的电场分析方法,以考虑较为极端的情况。以昭通±500 k V换流站为研究对象,根据其直流场的实际模型,建立有限元仿真模型,通过计算得到了直流场内出现较大场强的部位以及对应的场强值。对这些金具的起晕校验结果表明所选直流场在电晕控制方面存在较大裕度。本研究对直流场金具的优化设计提供了一定的指导。
胡蓉
doaj  

Dual‐Engineered Electrocatalyst: Work‐Function‐Driven Electronic Reconfiguration and Self‐Sacrifice Nanorod‐Templated Nanoflowers of Ni3S2/MoS2 Heterojunctions for High‐Performance Hydrogen Evolution

open access: yesRare Metals, Volume 45, Issue 5, May 2026.
ABSTRACT Water electrolysis is a promising method for green hydrogen production, but slow hydrogen evolution reaction (HER) kinetics require efficient catalysts. In this study, we develop a Ni3S2/MoS2 heterostructure electrocatalyst using a work‐function‐driven electronic modulation strategy combined with a self‐sacrificial template approach.
Xinxin Zhao   +11 more
wiley   +1 more source

高频下真空灭弧室纵向磁场仿真

open access: yesGaoya dianqi, 2020
真空灭弧室是机械式高压直流断路器的核心部件,为了有利于熄灭电弧,开断直流电流时,通常利用人工过零技术,在直流电流上叠加高频震荡电流,使得开断故障电流过零。由于直流断路器开断电流为高频电流,灭弧室间隙磁场分布对真空断路器的开断有着决定作用,通过建立三维真空灭弧室触头有限元模型,分析计算高频情况下的真空灭弧室的磁场分布情况。结果表明:高频情况下触头间隙磁场大小以及磁场滞后时间受到严重影响,触头间隙纵向磁场大小与平板触头产生效果类似,这对断路器开断效果很不利。
李如春   +5 more
doaj  

Overreliance on Orthographic Similarity in L2‐Japanese Conceptual Processing by L1‐Chinese Learners

open access: yesInternational Journal of Applied Linguistics, Volume 36, Issue 2, Page 1807-1820, May 2026.
ABSTRACT Orthographic and phonological similarities between first (L1) and second (L2) languages can facilitate L2 processing. Particularly, L1‐Chinese learners of L2‐Japanese can benefit from the shared morphosyllabic Chinese characters (Japanese kanji/Chinese hanzi) because of their similar orthographies.
Xuehan Zhao, Kexin Xiong, Sachiko Kiyama
wiley   +1 more source

Focusing Events, Agenda Setting, and Narrative Numbing

open access: yesReview of Policy Research, Volume 43, Issue 3, May 2026.
ABSTRACT Focusing events are important in understanding policy change, as demonstrated in Birkland's work on agenda setting, the multiple streams framework, and the narrative policy framework. These frameworks emphasize the role of focusing events in drawing public attention to broader issues.
Megan K. Warnement Wrobel   +1 more
wiley   +1 more source

交直流并行输电线路地面混合电场的计算及试验研究

open access: yesGaoya dianqi, 2014
针对交直流并行输电线路下方地面混合电场的特性,对交直流电场的相互影响作了分析,并对单根交流导线和单根直流导线形成的混合电场进行了试验研究。采用了基于Deutcsh假设的计算方法,对试验模型的地面混合电场进行了理论数值计算,试验结果与理论计算的结果相吻合,验证了该算法的有效性。最后,计算了实际的特高压交直流并行输电线路的地面混合电场,并与忽略交直流电场相互影响的计算结果进行对比,得出了交流线路的屏蔽效应将使地面直流离子流电场强度减小等结论。
鲁成栋, 肖登明, 秦松林
doaj  

HIERARCHICAL PRECARITY: Dance Hosting, Labor Struggles, and Masculine Insecurities in China

open access: yesCultural Anthropology, Volume 41, Issue 2, Page 376-401, May 2026.
ABSTRACT Young Chinese male migrant workers partner with middle‐aged women in dance halls, and sell intimacy and romantic relationships in everyday locations as “dance hosts.” Dance hosts experience considerable job precarity and masculine insecurities.
JUAN CHEN
wiley   +1 more source

零区气流场对湍流模型参数C1e敏感度的仿真分析

open access: yesGaoya dianqi, 2016
湍流模型参数的合理设置是气流场仿真中的要素之一。对于电流零区湍流模型的选择及湍流参数的设置,研究者持有不同的观点。文中针对零区气流场对标准k-epsilon湍流模型参数敏感度大小的问题,基于磁流体动力学原理,以252 k V压气式结构燃弧阶段的动态仿真为基础,计算了电流过零阶段湍流模型参数C1e对气流场的影响偏差百分比。通过特定监测点处气压与温度的对比,分析讨论了引起敏感度数值差异较大的原因。研究表明,湍流模型参数C1e的改变对喷口区域内气体压力的影响较小,对于气体温度的影响相对较大 ...
吴杰   +6 more
doaj  

Recent Advances in Piezocatalysis and Piezo‐Photocatalysis in Energy and Environment: Materials, Design, and Applications

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Piezocatalytic technology utilizes mechanical strain or stress‐induced piezoelectric phenomena to produce robust internal electric fields, markedly improving the separation efficiency of e−‐h+ pairs. This method has emerged as a focal point in catalysis by removing reliance on conventional light or electrical energy via its mechanical‐to ...
Yue Zhou   +5 more
wiley   +1 more source

h‐BN/HfO2 Interface‐Enabled Optoelectronic Doping for Low‐Voltage, Reconfigurable MoTe2 Nanoelectronics

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Engineering the semiconductor/dielectric interface is crucial for advancing two‐dimensional (2D) nanoelectronics, where device performance is predominantly governed by interfacial defects and dielectric coupling. Optoelectronic doping based on carrier trapping at the h‐BN/SiO2 interface has enabled non‐volatile and reversible carrier ...
Zhe Zhang   +6 more
wiley   +1 more source

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