[How I treat vasovagal syncope in children]. [PDF]
Zhongguo Dang Dai Er Ke Za ZhiZou RM, Wang C.
europepmc +1 more source
, 1999 简要叙述了磷酸型燃料电池（ＰＡＦＣ）最新研究进展，介绍了在相同条件下比较氢和甲烷作为燃料在磷酸（８５％）电解质和Ａ型电解质（多氟磷酸和磷酸的混合物）中的电化学行为。在１３０℃，将塌解质燃料电池的输出特性与磷酸（８５％）电解质燃料电池进行比较。全部 试验在有参比电极的三电极试验电池中进行，试验遇极采用自制电极的三电极辅助电极采用光亮铂电极或者镀铂电极，参比电极采用动态氢电极。测量系统是由Ｄ、Ｈ ...
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, 2018 镁/海水电池是一种高比能量、安全、低成本的水下电源,在该电池中氢析出电极具有重要的作用。采用氢气气泡模板法在泡沫镍基底上电化学沉积得到多孔镍,然后通过化学沉积法修饰微量铂（〈25μg/cm2）制备出高效的多孔氢析出电极,并将其用作镁/海水电池阴极。通过SEM、EDS、电化学等表征方法分析了阴极的微观形貌、组成及电池的放电性能和性能衰减原因。结果表明：所制备的阴极含有丰富的纳米孔道结构,具有稳定的析氢性能;采用该阴极的镁/海水电池在1 m A/cm2并持续放电240 h的条件下,质量比能量高达801 Wh/
王二东 +4 more
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[Characteristics of the subtype of vestibular migraine with ear fullness: association with early onset age and low-frequency hearing loss]. [PDF]
Lin Chuang Er Bi Yan Hou Tou Jing Wai Ke Za ZhiJiang L +5 more
europepmc +1 more source
[Relationship between short-term prognosis and symptoms of vertigo and vestibular function in patients with unilateral flat descending sudden sensorineural hearing loss]. [PDF]
Lin Chuang Er Bi Yan Hou Tou Jing Wai Ke Za ZhiZhu J +9 more
europepmc +1 more source
[A case report of benign paroxysmal vertigo of childhood complicated with patent foramen ovale and emotional disorder]. [PDF]
Lin Chuang Er Bi Yan Hou Tou Jing Wai Ke Za ZhiWu D, Zeng X.
europepmc +1 more source
, 2017 采用自主开发的乙二醇制备方法对毫克级的实验室级别催化剂的放大制备工艺进行研究。将Pt3Pd/C合金催化剂的单次制备从0.1、1 g到10 g的逐级放大过程中,合金纳米颗粒的尺寸分布与形貌（TEM表征）、晶体结构（XRD表征）与电化学性质（循环伏安扫描与氧还原极化曲线测试）,均保持良好的一致性。10 g级别放大制备的Pt3Pd/C在半电池测试中表现出良好的稳定性;在全电池测试过程表现出优于商业Pt/C的电催化性能;在组装的电堆模块及发动机系统表现出优于商业Pt/C电催化活性及稳定性 ...
秦晓平 +4 more
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[Guillain-Barré syndrome following allogeneic hematopoietic stem cell transplantation in a pediatric patient: a case report and literature review]. [PDF]
Zhongguo Dang Dai Er Ke Za ZhiLyu JY +5 more
europepmc +1 more source
[A comparative study of auditory and vestibular function in patients with acute low-tone sensorineural hearing loss versus stage 1 and 2 Ménière's disease]. [PDF]
Lin Chuang Er Bi Yan Hou Tou Jing Wai Ke Za ZhiLiu Q +6 more
europepmc +1 more source
, 2001 采用高频C-V曲线方法，研究了50nm及15nm MOS电容电离辐射空穴陷阱及界面态的建立过程。二种样品电离辐射空穴陷阱电荷密度在1×10~3Gy(Si)剂量下近乎相同，而在大于3×10~3Gy(Si)_剂量下，50nm MOS电容的电荷密度约为15nm MOS电容的2倍。利用电离辐射后的隧道退火效应，计算出二种样品电离辐射陷阱电荷在Si ...
刘忠立
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