Gaoya dianqi某500 kV变电站内电缆线路距邻近单台电抗器铺设距离满足国网五通要求，然而近年来此电缆线路两端的铠装层接地线电流值出现异常增大并引起异常发热。文中针对此问题建立了电缆线路铠装层及邻近三相电抗器电磁场模型，采用有限元数值计算方法，进行了基于场—路耦合的三相电抗器漏磁场对电缆线路接地线电流异常的分析。接地线电流计算结果与实测结果接近，验证了仿真模型及方法的正确性，并在此基础上，讨论了电抗器相数、电缆铺设距离和电缆埋地深度对电缆铠装层接地线电流的影响，为变电站内三相电抗器周围电缆的铺设提供理论指导。
陈思哲 +6 more
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Gaoya dianqi干式空心电抗器的温度场研究对电抗器的设计和制造至关重要。文中对大容量干式空心并联电抗器，采用电磁—流热多物理场耦合方法，考虑了温度对铝导线电导率的影响，建立了包含星型架、撑条和包封绝缘的三维电抗器有限元仿真模型。对于110 kV输电系统中BKGKL-40000/110电抗器进行了仿真分析，分析结果表明电抗器温度分布总体呈现上高下低的趋势，在电抗器上部中心的空气流速最高，将结果与试验测温结果相比较，两者较为接近，说明了仿真方法的准确性。此外，对加设防雨罩后的电抗器仿真结果进行了分析比较 ...
沈霈宸 +4 more
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[Progress in electric field assisted molecular imprinting technology]. [PDF]
Se PuWu JY, Huang XJ.
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500kV空气断路器开断电抗器时A相爆炸的原因分析及其并联电阻在限制截流过电压中的作用探讨
Gaoya dianqi, 1985 本文分析了500kV空气断路器开断电抗器时的爆炸过程,计算了在不同分闸电阻下开断后的恢复电压。认为这次事故的根本原因在于选用断路器失误,相对于被切电抗器的感抗来说,断路器的分闸电阻太低,因而在辅助断口截流开断的情况下,必然产生很高的过电压,引起灭弧室内绝缘薄弱环节击穿,并形成“烧闷罐”而爆炸。本文认为把分闸电阻增大至8000Ω,有可能把截流过电压限制在2.3倍以下。
doaj
[Development and electrophysiological validation of a temporal interference transcranial magnetic stimulation system for mice]. [PDF]
Sheng Wu Yi Xue Gong Cheng Xue Za ZhiCui C, Wang T, Zhang Y, Zheng W, Xu G.
europepmc +1 more source
[Study on the electric field transmission characteristics of conducted-electrode tumor treating fields]. [PDF]
Sheng Wu Yi Xue Gong Cheng Xue Za ZhiLiu K, Zhang J, Shi J, Fang H, Li X.
europepmc +1 more source
[Research progress on flexible wearable sensors for health monitoring]. [PDF]
Sheng Wu Yi Xue Gong Cheng Xue Za ZhiChen X, Xu G.
europepmc +1 more source
[Determination of tetracyclines in animal muscle tissues by ultra performance liquid chromatography- tandem mass spectrometry]. [PDF]
Se PuChu K +5 more
europepmc +1 more source
[Construction and practice of the "Construction Supports Competitions-Competitions Nurture Teaching-Teaching Promotes Learning" closed-loop innovative teaching mode： a case study of micro-plasma emission spectrometer setup and trace element analysis experiment]. [PDF]
Se PuXue WY +8 more
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[Research progress on paper-based microfluidic chips in pathogen detection]. [PDF]
Se PuLiu XT, Shi J, Shi M.
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