Results 41 to 50 of about 32,363 (218)

Ultra-fast switching memristors based on two-dimensional materials

Nature Communications
The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of
S. S. Teja Nibhanupudi, Anupam Roy, Dmitry Veksler, Matthew Coupin, Kevin C. Matthews, Matthew Disiena, Ansh, Jatin V. Singh, Ioana R. Gearba-Dolocan, Jamie Warner, Jaydeep P. Kulkarni, Gennadi Bersuker, Sanjay K. Banerjee   +12 more
doaj   +1 more source

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Advanced Science, 2023
Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation.
Jun Hwan Moon, Eunjin Jeong, Seunghyun Kim, Taesoon Kim, Eunsoo Oh, Keun Lee, Hauk Han, Young Keun Kim   +7 more
doaj   +1 more source

Regulated Ion‐Diffusion Hydrogels for Subtle and Multimodal Temperature‐Strain Sensing in Wound Monitoring

Advanced Functional Materials, EarlyView.
A soft, dual‐channel hydrogel patch enables simultaneous detection of wound temperature and strain by integrating ion‐diffusion‐mediated thermoelectric and resistive sensing. The conformal design maintains stable performance during motion, capturing subtle inflammatory and mechanical changes for continuous wound monitoring.
Yu Fang, Xinglong Pan, Zhiwei Li, Wanheng Lu, Chang Liu, Yi Zhou, Guo Tian, Ghim Wei Ho   +7 more
wiley   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors

Nature Communications
Two-dimensional (2D) dielectrics, integrated with high-mobility semiconductors, show great promise to overcome the scaling limits in miniaturized integrated circuits.
Weiting Xu, Jiayang Jiang, Yujia Chen, Ning Tang, Chengbao Jiang, Shengxue Yang   +5 more
doaj   +1 more source

Recent advances of 2D materials in semiconductor application: A review

Advanced Sensor and Energy Materials
Semiconductors have performed remarkably since the advent of two-dimensional (2D) materials with excellent electrical, optical, and thermal characteristics.
Md. Aminul Islam, Safiullah Khan, Juhi Jannat Mim, S M Maksudur Rahman, Md. Ahadul Islam Patwary, Md. Safiul Islam, Nayem Hossain   +6 more
doaj   +1 more source

Static characteristics of CMOS digital circuit based on transition metal dichalcogenide transistors

AIP Advances, 2019
Static characteristics of digital combinational logic circuits and Schmitt triggers based on two-dimensional (2D) transition metal dichalcogenides (TMDs) have been systematically explored.
F. F. Mao, Z. Jin, L. Y. Shang, Z. G. Hu, J. H. Chu   +4 more
doaj   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source