Results 61 to 70 of about 32,363 (218)

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Reconfigurable artificial synapse and neuron based on 2D organic-inorganic hybrid perovskite memristor

Materials & Design
Memristors have attracted significant attention for their unique conductive characteristics and potential in neuromorphic computing. Reconfigurable memristors can further remarkably enable simplification of circuits and the realization of complex ...
Yongyue Xiao, Yang Li, Canhui Liu, Shuai Zhang, Dong Li, Sicong Ming, Yuanduo Qu, Mengdi Hao, Chen Wang, Hao Huang, Yanliang Liu, Jiahong Wang, Xue-Feng Yu, Cong Ye   +13 more
doaj   +1 more source

A miniaturized statically balanced compliant mechanism for on-chip ultralow wide-bandwidth vibrational energy harvesting [PDF]

Mechanical Sciences
This research demonstrates a miniaturized statically balanced compliant mechanism (SBCM) at the micro-electromechanical systems (MEMS) scale. The primary objective is to integrate the MEMS-scale SBCM on chip as the fundamental structure of vibrational ...
H. Liang, H. Liang, H. Liang, H. Fu, G. Hao, G. Hao   +5 more
doaj   +1 more source

Semiconducting Polymers Post‐Functionalized With Ureido‐Pyrimidinone for Robust Stretchable Transistors

Advanced Functional Materials, EarlyView.
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah, Livy Laysandra, Kosuke Terayama, Xingyu Yang, Atsushi Isobe, Tai‐Chin Chiang, Tsuyoshi Michinobu, Yu‐Cheng Chiu   +7 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Structural Power Composites Based on High Mass Loading Zn‐Ion Hybrid Supercapacitors with Metal Mesh Current Collectors and Aramid Nanofiber/Glass Fiber Composite Electrolytes

Advanced Functional Materials, EarlyView.
A multifunctional structural power composite is developed by integrating high‐mass‐loading Zn‐ion hybrid supercapacitors with metal mesh current collectors and aramid nanofiber‐based composite electrolytes, enabling simultaneous load‐bearing capability and enhanced areal energy storage.
Yuseung Choi, Gilyong Shin, Hoyeon Lee, Eun Jae Nam, Byeong Jun So, Sungryul Yun, Fu‐Kuo Chang, Jei Gyeong Jeon, Tae June Kang   +8 more
wiley   +1 more source

Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold

Advanced Science
Two‐dimensional (2D) materials are promising for resistive switching in neuromorphic and in‐memory computing, as their atomic thickness substantially improve the energetic budget of the device and circuits.
Sara Ghomi, Christian Martella, Yoonseok Lee, Penny Hui‐Ping Chang, Paolo Targa, Andrea Serafini, Davide Codegoni, Chiara Massetti, Sepideh Gharedaghi, Alessio Lamperti, Carlo Grazianetti, Deji Akinwande, Alessandro Molle   +12 more
doaj   +1 more source

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source