Results 101 to 110 of about 95,605 (300)

Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework

Advanced Functional Materials, EarlyView.
The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu, Jun Xu, Minmin Fan, Jingcheng Xu, Mengyuan Li, Yun Gong, Weiwei Yang, Lei Li, Yong Zhou, Deqiang Zhao, Yuhua Xue, Xingtao Xu, Chang Q. Sun, Liming Dai   +13 more
wiley   +1 more source

Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

, 2006
The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method ...
Li, DL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China., Li DL (Li Dong-Lin), Zeng YP (Zeng Yi-Ping)   +2 more
core  

Performance of the M062X density functional against the ISOL set of benchmark isomerization energies for large organic molecules

, 2010
Gas phase standard state (298.15 K, 1 atm) isomerization energies were calculated using the M062X functional with the QZVP, 6-311++G(d,p), 6-311++G(2d,2p), and cc-pVTZ basis sets against the 24 reactions in the ISOL set of benchmark isomerization ...
Sierra Rayne, Kaya Forest
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Local-field effects on the plasmon dispersion of two-dimensional transition metal dichalcogenides

New Journal of Physics, 2013
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are gaining increasing attention as an alternative to graphene for their very high potential in optoelectronics applications.
Pierluigi Cudazzo, Matteo Gatti, Angel Rubio   +2 more
doaj   +1 more source

Landau level bosonization of a 2D electron gas

, 1996
4 pages ...
Westfahl Jr., H., Neto, A. H. Castro, Caldeira, A. O.   +2 more
openaire   +2 more sources

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Angle-resolved spectroscopy of electron-electron scattering in a 2D system

, 2003
Electron-beam propagation experiments have been used to determine the energy and angle dependence of electron-electron (ee) scattering in a two-dimensional electron gas (2DEG) in a very direct manner.
R. N. Gurzhi, H. Predel, H. Buhmann, L. W. Molenkamp, A. V. Yanovsky, A. N. Kalinenko, A. I. Kopeliovich   +6 more
core   +1 more source

Understanding microwave surface-wave sustained plasmas at intermediate pressure by 2D modeling and experiments [PDF]

, 2017
An Ar plasma sustained by a surfaguide wave launcher is investigated at intermediate pressure (200-2667Pa). Two 2D self-consistent models (quasi-neutral and plasma bulk-sheath) are developed and benchmarked.
van der Mullen, Joost J A M, Delplancke-Ogletree, Marie-Paule, Kolev, Stanimir, Mihailova, Diana D.B., Mullen, JJAM Joost van der, Graef, W., Graef, WAAD Wouter, Mihailova, DB Diana, Bogaerts, Annemie A M B A., Mihailova, D., Godfroid, T., Berthelot, Antonin, Berthelot, A., Chen, Guoxing, Graef, Wouter, Georgieva, Violeta, van der Mullen, Joost, Silva, T., Bogaerts, A., Mihailova, Diana, Silva, Tiago, van der Mullen, J., Britun, Nikolay, Delplancke, Marie-Paule, Bogaerts, A, van Dijk, J., Dijk, J Jan van, Bogaerts, Annemie, Britun, N., Delplancke-Ogletree, M.P., Graef, Wouter W.A.A.D., Delplancke, M-P, Georgieva, V., Kolev, S., Godfroid, Thomas, Snyders, Rony, van Dijk, Jan, Snyders, R.   +37 more
core   +1 more source

Analysis of homogeneity of 2D electron gas at decreasing of electron density

, 2010
We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density distribution and serial resistance of 2D electron gas are discussed.
Sherstobitov, A. A., Minkov, G. M., Germanenko, A. V., Rut, O. E., Soldatov, I. V., Zvonkov, B. N.   +5 more
openaire   +2 more sources