Results 111 to 120 of about 95,605 (300)

Receptor‐Free Identification of Toxic Gases Enabled by Hygroscopic Aqueous Salt Films

open access: yesAdvanced Functional Materials, EarlyView.
Water as a gas sensor coating sounds impossible—until it stops evaporating. Here, hygroscopic salt solutions (LiCl, LiBr, H3PO4) form non‐drying aqueous films on CNT chemiresistors under ambient air. Gases partition into these liquid layers, sometimes transforming into water, and generate salt‐specific resistance fingerprints across a four‐channel ...
Seongwoo Lee   +5 more
wiley   +1 more source

Single-crystal 2D covalent organic frameworks for high-capacity methane storage

open access: yesNature Communications
2D covalent organic frameworks (COFs) usually possess a polycrystalline nature as well as lower porosity and surface area than 3D counterparts, restraining their exploration over gas storage applications.
Baoqiu Yu   +13 more
doaj   +1 more source

Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

open access: yesAIP Advances, 2017
Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers deposited
Seungjin Lee   +6 more
doaj   +1 more source

Intrinsic Photoactive Star ZnPc–Poly(glutamate) Nanoplatforms for Multimodal Glioblastoma Therapy and Brain‐Targeted Delivery

open access: yesAdvanced Functional Materials, EarlyView.
An intrinsic photoactive star‐shaped zinc phtalocyanine‐poly(L‐glutamic acid) (ZnPc‐PGA) nanoplatform for multimodal glioblastoma (GBM) therapy and brain‐targeted elivery. A ZnPc‐PGA‐based multifunctional theranostic nanocarrier platform enables image‐guided, multimodal GBM therapy. ZnPc‐PGA nanocarriers support the integration of fluorescence imaging,
Amina Benaicha‐Fernández   +14 more
wiley   +1 more source

Mode softening in charge-density excitations of a two-dimensional electron gas driven by Rashba spin-orbit interaction

open access: yes, 2006
The electron density response of a uniform two-dimensional (2D) electron gas is investigated in the presence of a perpendicular magnetic field and Rashba spin-orbit interaction (SOI).
Wu, XG, Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China.   +3 more
core  

Zero-bias tunneling anomaly in a clean 2D electron gas caused by smooth density variations [PDF]

open access: yes, 2007
journal articleWe show that smooth variations, δn(r), of the local electron concentration in a clean 2D electron gas give rise to a zero-bias anomaly in the tunnel density of states, v(ω), even in the absence of scatterers, and thus, without the ...
Mishchenko, Eugene; Raikh, Mikhail E.   +1 more
core  

High valley-degeneracy electron gas at double perovskite - strontium titanate interface

open access: yesCommunications Physics
Emergent phenomena such as two-dimensional electron gas (2DEG) and interfacial superconductivity and ferromagnetism are generally built on the interface between insulating oxide thin films and substrates, e.g., LaAlO3/SrTiO3, where the 2D profiles of ...
Zhao-Cai Wang   +17 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min   +13 more
wiley   +1 more source

Analytical Model Development for Unified 2D Electron Gas Sheet Charge Density of AlInN/GaN MOSHEMT

open access: yes, 2017
We have developed a unified analytical model for computation of 2D electron gas sheet charge density in AlInN/GaN metal-oxide-semiconductor high electron mobility transistor device structure.
Gaini Amarnath   +5 more
core   +1 more source

Weak antilocalization in a 2D electron gas with chiral splitting of the spectrum [PDF]

open access: yesJournal of Experimental and Theoretical Physics Letters, 1998
Motivated by the recent observation of the metal-insulator transition in Si-MOSFETs we consider the quantum interference correction to the conductivity in the presence of the Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained.
openaire   +2 more sources

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