Results 211 to 220 of about 93,066 (258)

Multi-GeV electron beam generation via two-stage laser wakefield acceleration. [PDF]

Sci Rep
Haq RU, Rezaei-Pandari M, Xie X, Liang X, Sun M, Zhu P, Lu Z, Zhang G, Li L, Xue H, Hafz NAM, Zhu J.   +11 more
europepmc   +1 more source

Room-Temperature QCM Sensor Based on GO@WO₃ Nanocomposites for Ammonia Detection. [PDF]

Nanomaterials (Basel)
Wang L, Li C, Peng L, Niu J.
europepmc   +1 more source

Photocatalytic CO₂ reduction to methanol: from mechanistic insights to reactor design integration. [PDF]

RSC Adv
Zuo C, Wang J, Xin C, Su Q.
europepmc   +1 more source

Formation of Quasi-2D [Mo_n+1C_n] Layered Structures via Carburizing Metal Films toward Surface Functional Group-Free Molybdenum Carbide MXene Thin Films. [PDF]

J Am Chem Soc
No J, Ahn T, Kim TH, Choi HC.
europepmc   +1 more source

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Origin of the 2D Electron Gas at the SrTiO₃ Surface

Advanced Materials, 2022
AbstractBulk SrTiO3 is a well‐known band insulator and the most common substrate used in the field of complex oxide heterostructures. Its surface and interface with other oxides, however, have demonstrated a variety of remarkable behaviors distinct from those expected.
Xi Yan, Friederike Wrobel, I‐Cheng Tung, Hua Zhou, Hawoong Hong, Fanny Rodolakis, Anand Bhattacharya, Jessica L. McChesney, Dillon D. Fong   +8 more
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Spin effects in the 2D electron gas

Solid State Communications, 2001
Abstract Spin affects the properties of the electron gas in a subtle way. The quantitative and, in fact, even the qualitative determination of spin dependent properties in this system requires calculations of extreme accuracy. Here, we review predictions of fixed-node diffusion Monte Carlo simulations with Slater–Jastrow as well as backflow nodes for
SENATORE, GAETANO, MORONI S., VARSANO D.
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Organic High Electron Mobility Transistors Realized by 2D Electron Gas

Advanced Materials, 2017
A key breakthrough in inorganic modern electronics is the energy‐band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over ...
Panlong Zhang, Haibo Wang, Donghang Yan
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TRANSPORT IN A POLARIZATION-INDUCED 2D ELECTRON GAS

International Journal of High Speed Electronics and Systems, 2001
AlGaN/GaN structures constitute a new class of 2D systems in that a large population of electrons can be produced without doping as a result of spontaneous and strain-induced polarization. Electron transport can, in principle, be mediated solely by phonon scattering and, for the first time, it is possible to realistically envisage the formation of a ...
B. K. RIDLEY, N. A. ZAKHLENIUK
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RESIDUAL BULK VISCOSITY OF A 2D ELECTRON GAS

2021
The nonzero bulk viscosity signals breaking of the scale invariance. We demonstrate that a disorder in two-dimensional noninteracting electron gas in a perpendicular magnetic field results in the nonzero disorder-averaged bulk viscosity. We derive analytic expression for the bulk viscosity within the self-consistent Born approximation.
Zahkarov, Vl.A., Burmistrov, I.S.
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Coulomb blockade of tunneling in a 2D electron gas

Surface Science, 1992
The 2D electron gas of a GaAs/GaAlAs heterojunction is confined to a small island by means of Schottky gates. Two gates provide adjustable tunnel barriers and a central gate controls the electron number of the island. Conductance oscillations, periodic with the electron number, are observed in the Coulomb blockade regime with negligible energy level ...
C. Pasquier, D.C. Glattli, U. Meirav, F.I.B. Williams, Y. Jin, B. Etienne   +5 more
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