Results 41 to 50 of about 93,066 (258)

Spin Resonance Absorption in a 2D Electron Gas

open access: yesActa Physica Polonica A, 2007
We analyze the power absorption at electron spin resonance excited by the Bychkov{Rashba spin{orbit fleld in a 2D electron gas. We show that, as long as the absorbed power is dissipated by the usual spin lattice relaxation mechanisms, the resonance line shape is expected to be of pure absorption type, i.e., it can be described by the imaginary part of ...
W. Ungier, W. Jantsch, Z. Wilamowski
openaire   +1 more source

Low‐Angle Grain Boundaries and Re‐Segregation in Single‐Crystalline Ni‐Base Superalloys

open access: yesAdvanced Engineering Materials, EarlyView.
This work demonstrates that Re‐segregation at low‐angle grain boundaries (LAGBs) in Ni‐base superalloys is influenced by misorientation angle. Advanced microscopy and atom probe tomography reveal that higher misorientation angles increases Re‐segregation.
Alireza B. Parsa   +9 more
wiley   +1 more source

Hole doping effect of MoS2 via electron capture of He+ ion irradiation

open access: yesScientific Reports, 2021
Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He+ ion irradiation: converting n-type MoS2 to p ...
Sang Wook Han   +6 more
doaj   +1 more source

Creating Ti–Fe α/β Alloys by Diffusion‐Driven Solid‐State Processing

open access: yesAdvanced Engineering Materials, EarlyView.
This study proposes making alloys containing fast diffusing elements that are difficult to produce by ingot metallurgy, by diffusion‐driven solid‐state HIP processing of elemental powders and low‐temperature homogenisation. Here, novel Fe‐Ti α–β alloys are formed having fine α–β lamellae, a small β prior grain size without significant intermetallics ...
Jiaqi Xu   +10 more
wiley   +1 more source

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface

open access: yesAdvanced Electronic Materials, 2020
A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated.
Taehwan Moon   +5 more
doaj   +1 more source

Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides

open access: yesApplied Sciences, 2020
In this study, we investigate the electrical transport properties of back-gated field-effect transistors in which the channel is realized with two-dimensional transition metal dichalcogenide nanosheets, namely palladium diselenide (PdSe2) and molybdenum ...
Antonio Di Bartolomeo   +4 more
doaj   +1 more source

Karl Popper and the Mechanisms of Hydrogen Embrittlement

open access: yesAdvanced Engineering Materials, EarlyView.
Representation of the beginning of loss of ductility rather than embrittlement. Small concentrations of hydrogen in a diffusible form within iron are well‐established to harm the mechanical integrity of steels. There are theories that attempt to explain the pernicious role of hydrogen.
H. K. D. H. Bhadeshia
wiley   +1 more source

High‐Performance 2D C‐Axis‐Aligned Crystalline Oxide Semiconductor Heterostructure Transistors via Aqueous Solution Deposition

open access: yesAdvanced Electronic Materials
2D wide bandgap oxide semiconductors with sub‐5 nm thickness have recently attracted tremendous attention owing to their unique electronic characteristics.
Wangying Xu   +5 more
doaj   +1 more source

Defect Engineering in Transition Metal Dichalcogenide-Based Gas Sensors

open access: yesChemosensors
Since the discovery of innovative two-dimensional (2D) materials, significant efforts have been dedicated to exploring their intriguing properties and emerging applications.
Xiaqing Fu   +3 more
doaj   +1 more source

Theoretical calculations to investigate thermodynamic properties of 2D electron gas in InP/InPBiN quantum structure

open access: yesResults in Physics, 2023
The electronic band structure of InP/InNPBi has been theoretically investigated within the framework of the band anticrossing (BAC) model. The matched InP/InNPBi heterostructure has been proposed as an interface that confines electrons in a 2D sheet. The
Faisal Alresheedi
doaj   +1 more source

Home - About - Disclaimer - Privacy