Results 51 to 60 of about 95,605 (300)

Low‐Angle Grain Boundaries and Re‐Segregation in Single‐Crystalline Ni‐Base Superalloys

open access: yesAdvanced Engineering Materials, EarlyView.
This work demonstrates that Re‐segregation at low‐angle grain boundaries (LAGBs) in Ni‐base superalloys is influenced by misorientation angle. Advanced microscopy and atom probe tomography reveal that higher misorientation angles increases Re‐segregation.
Alireza B. Parsa   +9 more
wiley   +1 more source

santoshkumarradha/LiCoO2-2-Dimensional-Spin-Gas: 2DEG LCO

open access: yes, 2020
Data/Codes/Plots for the paper on 2D Electron/hole Gas on ...
Santosh kumar
core   +1 more source

Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides

open access: yesApplied Sciences, 2020
In this study, we investigate the electrical transport properties of back-gated field-effect transistors in which the channel is realized with two-dimensional transition metal dichalcogenide nanosheets, namely palladium diselenide (PdSe2) and molybdenum ...
Antonio Di Bartolomeo   +4 more
doaj   +1 more source

Creating Ti–Fe α/β Alloys by Diffusion‐Driven Solid‐State Processing

open access: yesAdvanced Engineering Materials, EarlyView.
This study proposes making alloys containing fast diffusing elements that are difficult to produce by ingot metallurgy, by diffusion‐driven solid‐state HIP processing of elemental powders and low‐temperature homogenisation. Here, novel Fe‐Ti α–β alloys are formed having fine α–β lamellae, a small β prior grain size without significant intermetallics ...
Jiaqi Xu   +10 more
wiley   +1 more source

Ferroelectric Gates for Modulation of 2D Electron Gas at GaN/AlGaN Interfaces

open access: yes, 2005
The Pb(Zr,Ti)O3 ferroelectric gate was successfully integrated into the GaN/AlGaN heterostructure with 2D electron gas. The processing conditions were optimized in a way to obtain high quality textured Pb(Zr,Ti)O3 films without destroying the 2D gas ...
Lisa Malin   +3 more
core   +1 more source

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface

open access: yesAdvanced Electronic Materials, 2020
A transistor is fabricated with a 2D electron gas (2DEG) channel at the Al2O3 (AO)/SrTiO3 (STO) interface. The threshold voltage (Vth) shift of the 2DEG channel in the Pt/AO/2DEG/STO stack induced by negative bias stress is investigated.
Taehwan Moon   +5 more
doaj   +1 more source

Theoretical calculations to investigate thermodynamic properties of 2D electron gas in InP/InPBiN quantum structure

open access: yesResults in Physics, 2023
The electronic band structure of InP/InNPBi has been theoretically investigated within the framework of the band anticrossing (BAC) model. The matched InP/InNPBi heterostructure has been proposed as an interface that confines electrons in a 2D sheet. The
Faisal Alresheedi
doaj   +1 more source

Performance Analysis of Abradable Coating Systems for Aircraft Gas Turbines

open access: yesAdvanced Engineering Materials, EarlyView.
Three CoNiCrAlY/YSZ/MgAl2O4 abradable liner configurations on a nickel‐superalloy are evaluated by thermal‐gradient cycling and incursion tests. Laser ablation of the bondcoat and/or Y2O3‐stabilized ZrO2 (YSZ) intermediate layer increases mechanical interlocking and bonding for thick topcoats.
Hanna Heyl   +4 more
wiley   +1 more source

Spontaneous magnetization of the 2D electron gas

open access: yes, 2001
We discuss the occurrence of spontaneous spin-polarization in a 2D electron gas, as predicted by fixed-node DMC simulations of unprecedented accuracy, in which errors from finite time step, number of particles, and number of walkers have been ...
Gaetano Senatore   +3 more
core   +1 more source

Defect Engineering in Transition Metal Dichalcogenide-Based Gas Sensors

open access: yesChemosensors
Since the discovery of innovative two-dimensional (2D) materials, significant efforts have been dedicated to exploring their intriguing properties and emerging applications.
Xiaqing Fu   +3 more
doaj   +1 more source

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