Results 61 to 70 of about 230,641 (260)

4D-STEM of Beam-Sensitive Materials

Microscopy and Microanalysis, 2022
Karen C Bustillo, Steven E Zeltmann, Benjamin H Savitzky, Jim Ciston, Rohan Dhall, Peter Ercius, Colin Ophus, Andrew M Minor   +7 more
openaire   +1 more source

Elastic–Plastic Modeling and Experimental Characterization of Granular Jamming Actuators

Advanced Engineering Materials, EarlyView.
Granular jamming enables rapid switching between soft and rigid mechanical states. Here, a reduced‐order elastic‐perfectly‐plastic beam framework captures pressure‐dependent loading, unloading, residual deformation, and hysteresis in jammed beams, while matching three‐point bending experiments across materials and geometries. The framework links design
Saheli Patel, Prashant K. Purohit, Jordan R. Raney   +2 more
wiley   +1 more source

Accuracy, Reproducibility, and Calibration in 4D-STEM

Microscopy and Microanalysis, 2022
Benjamin H Savitzky, Colin Ophus
openaire   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

In Situ 4D-STEM [PDF]

Microscopy and Microanalysis, 2020
openaire   +1 more source

MerlinEM, the universal detector for 4D STEM and microED

Structural Dynamics
Scanning/transmission electron microscopes (S/TEMs) are invaluable tools for the characterisation of nanosized matter, in no small part due their flexibility to be configured to perform a wide variety of experiments. Most well known are the conventional high-resolution imaging modes with a static parallel electron beam or a scanning converged electron ...
Gearóid Mangan, Matúš Krajňák
openaire   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

An Ultrafast Direct Electron Camera for 4D STEM [PDF]

Microscopy and Microanalysis, 2021
Debaditya Chatterjee, Jingrui Wei, Alex kvit, Benjamin Bammes, Barnaby Levin, Robert Bilhorn, Paul Voyles   +6 more
openaire   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source