Results 231 to 240 of about 261,592 (260)

Neutron Irradiation of 4H SiC

Materials Science Forum, 2001
The effect of neutron irradiation on 4H SiC epitaxial layers are studied. Several different doses of both fast and thermal neutrons have been used and the samples have been annealed from 500 degreesC to 2000 degreesC. The defect concentration dependence on the fast neutron flux and on the annealing temperature is investigated.
F.H.C. Carlsson, L. Storasta, Björn Magnusson, Peder Bergman, K. Sköld, Erik Janzén   +5 more
openaire   +1 more source

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Japanese Journal of Applied Physics, 2020
We formulate scattering mechanisms in quasi-two-dimensional systems with a large density of interface states such as 4H-SiC MOS interfaces, and calculate the electron Hall mobility in 4H-SiC MOS inversion layers by Monte Carlo simulation.
Hajime Tanaka, N. Mori
semanticscholar   +1 more source

Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography

Japanese Journal of Applied Physics, 2020
The populations and propagation behaviors of pure and mixed threading screw dislocations (TSDs) in physical vapor transport (PVT) grown 4H-SiC crystals were investigated using X-ray topography. The X-ray topography studies revealed that mixed TSDs, which
N. Shinagawa, Takuto Izawa, Morino Manabe, T. Yamochi, N. Ohtani   +4 more
semanticscholar   +1 more source

Demonstration of a 4H SiC betavoltaic cell

Applied Physics Letters, 2006
A betavoltaic cell in 4H SiC is demonstrated. A p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.72V and a short circuit current density of 16.8nA∕cm2 were measured in a single p-n junction. A 6% lower bound on the power conversion efficiency was obtained.
M.V.S. Chandrashekhar, Christopher I. Thomas, Hui Li, Michael G. Spencer, Amit Lal   +4 more
openaire   +1 more source

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Physica Status Solidi (a), 2019
Radiation damage produced in 4H‐SiC n‐epilayers by electrons of different energies is presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and 10 MeV electrons with doses up to 600 kGy.
P. Hazdra, J. Vobecký
semanticscholar   +1 more source

Unique and Tunable Photodetecting Performance for Two-Dimensional Layered MoSe2/WSe2 p-n Junction on the 4H-SiC Substrate.

ACS Applied Materials and Interfaces, 2019
MoSe2/WSe2 two-dimensional transition-metal dichalcogenide (TMDC) heterojunction photodetectors based on epitaxial n-doped 4H-silicon carbide (SiC) substrate are investigated and exhibited low leakage, high stability, and fast photoresponse.
Wei Gao, Feng Zhang, Zhaoqiang Zheng, Jingbo Li   +3 more
semanticscholar   +1 more source

4H SiC Epitaxial Growth with Chlorine Addition

Chemical Vapor Deposition, 2006
AbstractThe growth rate of a 4H‐SiC epitaxial layer has been increased by a factor of 19 (up to 112 μm h–1) with respect to the standard process, with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl has been characterized by electrical, optical, and structural characterization methods.
F. LA VIA, G. GALVAGNO, G. FOTI, M. MAUCERI, S. LEONE, G. PISTONE, G. ABBONDANZA, VENERONI, ALESSANDRO, MASI, MAURIZIO, G. L. VALENTE, D. CRIPPA   +10 more
openaire   +3 more sources

Physical Modelling of 4H-SiC PiN Diodes

Materials Science Forum, 2012
With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization
Craig A. Fisher, Michael R. Jennings, Angus T. Bryant, Amador Pérez-Tomás, Peter Michael Gammon, Pierre Brosselard, Philippe Godignon, Philip Andrew Mawby   +7 more
openaire   +1 more source

Enhancing the photoelectrical performance of graphene/4H-SiC/graphene detector by tuning a Schottky barrier by bias

, 2020
Graphene/4H-SiC/graphene photodetectors, as well as graphene/4H-SiC heterojunctions, have been fabricated and characterized by utilizing a heating decomposition method. High-quality graphene has been grown on an n− doped 4H-SiC substrate along with a 900 
Cunzhi Sun, Xiufang Chen, Rongdun Hong, Xiaomeng Li, Xiangang Xu, Xiaping Chen, Jiafa Cai, Xue-ao Zhang, Weiwei Cai, Z. Wu, Feng Zhang   +10 more
semanticscholar   +1 more source

High-power-density 4H-SiC RF MOSFETs

IEEE Electron Device Letters, 2006
We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm ...
G. Gudjónsson, Fredrik Allerstam, H.Ö. Ólafsson, Per Åke Nilsson, Hans Hjelmgren, Kristoffer Andersson, Einar O. Sveinbjörnsson, Herbert Zirath, T. Rödle, R. Jos   +9 more
openaire   +1 more source