Results 1 to 10 of about 130,070 (297)

Study on the high-temperature static and dynamic constitutive model of silicon carbide-modified concrete [PDF]

open access: yesScientific Reports
Based on experimental investigations of concrete subjected to silicon carbide (SIC) modification, high-temperature exposure, and high-strain-rate loading, this study introduces the concept of a concrete damage factor.
Jinhua Wang   +7 more
doaj   +2 more sources

Doping-Less SiC p-i-n Diode: Design and Investigation

open access: yesIEEE Access, 2021
We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
doaj   +1 more source

Study on the preparation of silicon carbide from carbon in waste cathodes

open access: yesMaterials Research Express, 2022
Silicon carbide as the core material for third-generation semiconductors plays an important role in many fields; however, its large-scale applications as well as low-cost synthesis remain a challenge.
Hui Liao, Longjiang Li, Song Mao
doaj   +1 more source

Silicon Carbide Platelet/Silicon Carbide Composites [PDF]

open access: yesJournal of the American Ceramic Society, 1995
α‐silicon carbide platelet/β‐silicon carbide composites have been produced in which the individual platelets were coated with an aluminum oxide layer. Hot‐pressed composites showed a fracture toughness as high as 7.2 MPa·m 1/2 .
Mitchell, T.   +3 more
openaire   +2 more sources

Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network [PDF]

open access: yesКомпьютерная оптика, 2020
Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them.
A.V. Bragin   +3 more
doaj   +1 more source

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

open access: yesAIP Advances, 2021
Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 μm thick silicon (001) and 10 μm thick 3C-silicon carbide (001), grown on 500 μm silicon (001), were used as substrates and structured ...
F. Meier   +6 more
doaj   +1 more source

Soil stabilization using Silicon Carbide (SiC) nanoparticles: confirmation using XRD, SEM, and FTIR

open access: yesJournal of Civil Engineering and Management, 2022
The current research focuses on nanoparticles’ ground-improvement potential using clayey soil mixed with varying amounts of the nanoparticles “Silicon Carbide”.
Abdullah H. Alsabhan   +5 more
doaj   +1 more source

An Initial Assessment of Infiltration Material Selection for Selective Laser Sintered Preforms [PDF]

open access: yes, 2004
High-temperature infiltration is an important process that is used to add strength to skeletal microstructures. In this study, particulate metal matrix composites (MMCs) are fabricated.
Barrow, Stacia L.   +2 more
core   +1 more source

Rare-earth-doped cobalt tungstate nanofibers: Synthesis and photothermal-enhanced full-spectrum photocatalysis [PDF]

open access: yesShandong kexue
To achieve efficient utilization of the full solar spectrum and enhance the photocatalytic performance of cobalt tungstate (CoWO4), one-dimensional CoWO4 nanomaterials doped with rare-earth (RE) elements (Ce3+, Eu3+, Yb3+, and La3+) were synthesized ...
WANG Ke, GUO Enyan, LU Qifang, HAO Xiaopeng
doaj   +1 more source

Improvement of piezoresistance properties of silicon carbide ceramics through co-doping of aluminum nitride and nitrogen [PDF]

open access: yes, 2008
The piezoresistance coefficient was measured on co-doped silicon carbide ceramics. Evaluation samples of alpha-silicon carbide ceramics were first fabricated by glass capsule HIP method using powder mixture of silicon carbide and aluminum nitride with ...
Hayashi, Hidetaka   +2 more
core   +1 more source

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