Results 1 to 10 of about 47,237 (156)

Corrosion characteristics of silicon carbide and silicon nitride

open access: yesJournal of Research of the National Institute of Standards and Technology, 1993
The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher.
Munro, R. G., Dapkunas, S. J.
openaire   +3 more sources

Silicon Carbide Platelet/Silicon Carbide Composites [PDF]

open access: yesJournal of the American Ceramic Society, 1995
α‐silicon carbide platelet/β‐silicon carbide composites have been produced in which the individual platelets were coated with an aluminum oxide layer. Hot‐pressed composites showed a fracture toughness as high as 7.2 MPa·m 1/2 .
Mitchell, T.   +3 more
openaire   +2 more sources

Preparation of Silicon Carbide Film by Composite Sintering of Silicon Nitride and Silicon Carbide

open access: yesJournal of Physics: Conference Series, 2022
Abstract Graphite can be protected by coating it with a silicon carbide film. However, studies on the effects of different coating methods and process parameters on the thickness and bond strength of the films are not yet mature. In this paper, silicon nitride (Si3N4) and silicon carbide (SiC) are used as raw materials, and SiC films are
Wenyue Sun   +3 more
openaire   +1 more source

CUBIC SILICON CARBIDE ON SILICON

open access: yesInternational Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis, 2020
A basic technology for cubic silicon carbide (3C-SiC) formation on silicon (Si) plates in high-frequency (HF and HFI) and very-high-frequency (microwave) discharges at low pressure has been developed. It is found that 3C-SiC layers formation on Si should be multiple staged, but integrated, i.e.
Sergey Redkin   +2 more
openaire   +1 more source

Controlled Chemical Synthesis of Color Centers in Nanocrystalline Silicon Carbide. [PDF]

open access: yesNanomaterials (Basel)
Bezerra SM   +4 more
europepmc   +1 more source

Molecular Dynamics Study on the Mechanical Properties of Bilayer Silicon Carbide. [PDF]

open access: yesNanomaterials (Basel)
Peng Q   +8 more
europepmc   +1 more source

Amorphous silicon-carbide photonics for ultrasound imaging. [PDF]

open access: yesCommun Phys
Erdogan RT   +6 more
europepmc   +1 more source

Advances in silicon carbide pressure sensors for high-temperature extreme environment sensing. [PDF]

open access: yesMicrosyst Nanoeng
Wu C   +12 more
europepmc   +1 more source

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