Results 21 to 30 of about 47,237 (156)
Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting
, 2011 Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications.
Reuben, Robert L +15 more
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, 2012 Owing to the capricious wear of cutting tools, ultra precision manufacturing of silicon through single point diamond turning (SPDT) operation becomes a challenging task.
Reuben, Robert L +5 more
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Silicon carbide equipments for process intensification of silicon reactions [PDF]
, 2009 Bluestar Silicones, one of the worldwide leaders in silicones chemistry, proposes a R&D project, aiming to design new equipment for the transposition of batch to continuous processes.
Elgue, Sébastien +5 more
core
A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
, 2009 The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry.
Schöner, Adolf +7 more
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Octave-spanning microcomb generation in 4H-silicon-carbide-on-insulator photonics platform
, 2021 Silicon carbide has recently emerged as a promising photonics material due to its unique properties, including possessing strong second- and third-order nonlinear coefficients and hosting various color centers that can be utilized for a wealth of quantum
Lutong Cai (14364174) +3 more
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Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. [PDF]
, 2008 Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm.
Cheong, Kuan Yew +2 more
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Silicon Carbide Surface Cleaning and Etching
, 2018 Silicon carbide (SiC) surface cleaning and etching (wet, electrochemical, thermal) are important technological processes in preparation of SiC wafers for crystal growth, defect analysis or device processing.
Yakimova, Rositsa, +2 more
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Visible and Near-infrared Microdisk Resonators on a 4H-Silicon-Carbide-on-Insulator Platform
, 2021 Wavelength-sized microdisk resonators were fabricated on a single crystalline 4H-silicon-carbide-oninsulator platform (4H-SiCOI). By carrying out microphotoluminescence measurements at room temperature, we show that the microdisk resonators support ...
Jiaxiang Zhang (1286778) +9 more
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Ultraviolet photoluminescence from 6H silicon carbide nanoparticles
, 2008 We report stable photoluminescence from 6H silicon carbide nanocrystals dispersed in three different solvents: water, hydrofluoric acid, and toluene.
ROSSI, ANDREA MARIO +5 more
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Silicon Carbide As a Robust Neural Interface (Invited)
, 2016 The intracortical neural interface (INI) could be a key component of brain machine interfaces (BMI), devices which offer the possibility of restored physiological neurological functionality for patients suffering from severe trauma to the central or ...
Saddow, Stephen E., +6 more
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