Results 31 to 40 of about 47,237 (156)

Properties of nanostructured diamond-silicon carbide composites sintered by high pressure infiltration technique

, 2004
A high-pressure silicon infiltration technique was applied to sinter diamond–SiC composites with different diamond crystal sizes. Composite samples were sintered at pressure 8 GPa and temperature 2170 K.
Dub, S. N., T. Ungár, Voronin, G. A., Gubicza, Jenő, Zerda, T. W., T. W. Zerdaa, J. Gubicza, Ungár, Tamás, G. A. Voronin   +8 more
core   +1 more source

On the critical thickness of ceramic to shatter WC-Co bullet cores [PDF]

, 2011
In this paper, the 7.62 mm x 51 mm FFV round consisting of a tungsten carbide core (1550 HV) and copper gilding jacket was fired at silicon nitride, titanium diboride, tungsten carbide and silicon carbide ceramics. Of particular interest is the thickness
Hazell, Paul J., Roberson, Colin J.
core  

High-Efficiency Power Conversion Using Silicon Carbide Power Electronics

, 2013
The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act.
Peftitsis, Dimosthenis,, Nee, Hans Peter,, Tolstoy, Georg,, Sadik, Diane Perle,, Antonopoulos, Antonios,, Sadik, Diane,, Ängquist, Lennart,, Rabkowski, Jacek,, Lim, Jang-Kwon,, Bakowski, Mietek,, Zdanowski, Mariusz,, Nee, Hans-Peter,, Colmenares, Juan,   +12 more
core   +1 more source

MICROSTRUCTURES AND PHYSICAL PROPERTIES OF BIOMORPHIC SISIC CERAMICS MANUFACTURED VIA LSI-TECHNIQUE

, 2012
Biomorphic SiSiC ceramic composites were produced by liquid silicon infiltration (LSI) process. These materials are based on activated coal (ACBC) and wood fibers (MDF).
Raouf Jemmali, Heinz Voggenreiter, Jemmali, Raouf, Voggenreiter, Heinz, Weber, Steffen, Steffen Weber, Dietmar Koch, Koch, Dietmar   +7 more
core   +1 more source

Operation of Silicon Carbide BJTs Free from Bipolar Degradation

, 2010
The mechanisms of bipolar degradation in silicon carbide BJTs are investigated and identified. Bipolar degradation occurs as result of stacking fault (SF) growth within the low-doped collector region.
Reimark, M., Svedberg, J. -O, Keri, I., Östling, Mikael,, Konstantinov, A., Domeij, Martin,, Gumaelius, K., Zaring, C.   +7 more
core   +1 more source

Empirical evidence for the fractionation of carbon isotopes between diamond and iron carbide from the Earth’s mantle

, 2014
S.M. would like to thank the Engineering and Physical Sciences Research Council, the Diamond Trading Company, and the Department of Physical Sciences, The Open University (UK) for financial support during his time as a PhD student at University College ...
Krispin, Catherine, Crispin, K., Jones, A.P., Verchovsky, Alexander, Guillermier, C., Beard, Andrew, Milledge, H.J., Beard, Andy, Verchovsky, A.B., Jones, Adrian, Franchi, I.A., Milledge, H Judith, Mikhail, Sami, Guillermier, Christalle, Mikhail, S., Beard, Andrew D., Franchi, Ian   +16 more
core   +1 more source

XAFS spectrum of Silicon carbide

This dataset consists of X-ray absorption fine structure (XAFS) spectra at Si K-edge of Silicon carbide measured at Ritsumeikan-SR BL-10, and is a part of XAFS database (MDR XAFS DB, https://doi.org/10.48505/nims.1447) as a collection of ...
Ritsumeikan SR Center
core   +1 more source

Racetrack microresonator based electro-optic phase shifters on a 3C-silicon-carbide-on-insulator platform

, 2021
We report the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C-silicon-carbide-on-insulator (SiCOI) platform working at near-infrared (NIR) wavelengths.
Tianren Fan (6007907), Xi Wu (128938), Sai R. M. Vangapandu (14383404), Amir H. Hosseinnia (2604490), Ali Adibi (719655), Ali A. Eftekhar (1481626)   +5 more
core   +1 more source

Superconformal silicon carbide coatings via precursor pulsed chemical vapor deposition

, 2023
In this work, silicon carbide coatings (SiC) were successfully grown by pulsed chemical vapor deposition (CVD). The precursors silicon tetrachloride (SiCl4) and ethylene (C2H4) were not supplied in a continuous flow, but were pulsed alternately into the ...
Urban, Forsberg, Jing-Jia, Huang, Charles, Wijayawardhana, Henrik, Pedersen, Christian, Militzer   +4 more
core   +1 more source

Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures

, 2022
S.691-694This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers.
Grieb, M., Banzhaf, C.T., Frey, L., Bauer, A.J., Trautmann, A.   +4 more
core   +1 more source