Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network [PDF]
Компьютерная оптика, 2020 Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them.
A.V. Bragin +3 more
doaj +1 more source
Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting [PDF]
, 2011 Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications.
Luo, X. +3 more
core +5 more sources
Soil stabilization using Silicon Carbide (SiC) nanoparticles: confirmation using XRD, SEM, and FTIR
Journal of Civil Engineering and Management, 2022 The current research focuses on nanoparticles’ ground-improvement potential using clayey soil mixed with varying amounts of the nanoparticles “Silicon Carbide”.
Abdullah H. Alsabhan +5 more
doaj +1 more source
Improvement of piezoresistance properties of silicon carbide ceramics through co-doping of aluminum nitride and nitrogen [PDF]
, 2008 The piezoresistance coefficient was measured on co-doped silicon carbide ceramics. Evaluation samples of alpha-silicon carbide ceramics were first fabricated by glass capsule HIP method using powder mixture of silicon carbide and aluminum nitride with ...
Kishimoto, Akira +2 more
core +1 more source
Rare-earth-doped cobalt tungstate nanofibers: Synthesis and photothermal-enhanced full-spectrum photocatalysis [PDF]
Shandong kexueTo achieve efficient utilization of the full solar spectrum and enhance the photocatalytic performance of cobalt tungstate (CoWO4), one-dimensional CoWO4 nanomaterials doped with rare-earth (RE) elements (Ce3+, Eu3+, Yb3+, and La3+) were synthesized ...
WANG Ke, GUO Enyan, LU Qifang, HAO Xiaopeng
doaj +1 more source
Resistance of silicon carbide to penetration by a tungsten carbide cored projectile [PDF]
, 2003 Proceedings of the Ceramic Armor and Armor Systems symposium held at the 105th Annual Meeting of the American Ceramic Society, 27-30 April 2003, in Nashville, TN, USASilicon carbide is well known as being a ceramic that can be employed as part of an ...
Hazell, Paul J. +3 more
core +1 more source
Influence of temperature and crystal orientation on tool wear during single point diamond turning of silicon [PDF]
, 2012 Owing to the capricious wear of cutting tools, ultra precision manufacturing of silicon through single point diamond turning (SPDT) operation becomes a challenging task.
Reuben, Robert L +3 more
core +4 more sources
AIP Advances, 2014 Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step
Hui-Jun Guo +9 more
doaj +1 more source
Porous structures based on silicon carbide for photovoltaic cells
Физика волновых процессов и радиотехнические системы, 2019 A method for producing porous silicon carbide by carbonization of porous silicon is considered. The surface morphology and phase composition of porous silicon carbide layers obtained by diffusion of carbon from the gas phase into the porous silicon layer
D.Y. Golubeva +3 more
doaj +1 more source
Effect of reaction sintering modes on the structure and properties of carbide ceramics
Весці Нацыянальнай акадэміі навук Беларусі: Серыя фізіка-тэхнічных навук, 2019 Experimental studies of the structure, phase composition, physical and mechanical properties of the reaction-sintered ceramics based on silicon carbide and boron obtained by reaction sintering have been performed. It has been shown that the properties of
E. V. Zvonarev +4 more
doaj +1 more source