Results 51 to 60 of about 47,237 (156)

Electrical discharge machining of siliconized silicon carbide using copper electrode [PDF]

open access: yes, 2014
Silicon Carbide is the semiconductor material that becoming popular because of its special characteristic. But, its application is limited due to processing difficulty.
Sarabi, Arash Mazaheri
core  

Magnetism of hydrogen-irradiated silicon carbide

open access: yes, 2014
Spin-polarized density functional theory is used to study two-hydrogen defect complexes in silicon carbide. We find that the magnetism depends on the distances of the two hydrogen atoms.
Ying, Min-Ju   +3 more
core  

Studies of the ambient dependent inversion capacitance of catalytic metal oxide silicon carbide devices based on 6H- and 4H-SiC material

open access: yes, 1998
Platinum-oxide-silicon carbide structures change their capacitance upon gas exposure and are used as gas sensors. The decrease of the inversion capacitance within 750 to 900 degrees C due to hydrogen exposure is studied for 4H- and 6H-SiC,:both n- and p ...
Baranzahi, Amir,   +7 more
core  

Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

open access: yes, 2011
The advantageous electrical, thermal and mechanical properties make silicon carbide (SiC) a promising semiconductor for high temperature, high power and high frequency applications.
Nyborg, Lars,, Cao, Yu,
core  

Energy Optimal Switching Frequency for a 750V Metro Traction Drive Using Silicon Carbide MOSFET Inverter

open access: yes, 2018
The introduction of Silicon Carbide (SiC) MOSFET based inverters into the traction drive makes it possible to increase the inverter switching frequency and reduce energy consumption.
Dahlquist, Erik,   +4 more
core  

Silicon carbide

open access: yes, 2010
Individual hexagonal plate-shaped grains of silicon carbide are visible. The shape of these plates indicates that the silicon carbide is α-SiC, which consists of a mixture of various hexagonal and rhombohedral polytypes of silicon carbide, principally 6H,
DoITPoMS, University of Cambridge   +1 more
core  

Electrical characterization and accelerated aging of amorphous silicon carbide implantable encapsulation. [PDF]

open access: yesJ Neural Eng
Nguyen CK   +6 more
europepmc   +1 more source

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