Results 61 to 70 of about 592,847 (241)

The Effect of Substrate Crystal Orientations on Surface Properties of SiC Thin Layer Grown by MBE

Journal of Advanced Mechanical Design, Systems, and Manufacturing, 2008
Silicon carbide is expected to be used as a next-generation material because of its more effective mechanical and electronic properties. The hetero Molecular Beam Epitaxy process may provide a method to form thin layered mono-crystal Silicon carbide on a
Akira KAKUTA, Yuji FURUKAWA, Nobuyuki MORONUKI   +2 more
doaj   +1 more source

Ti3C2Tx MXene/Silver Composite Foams For Lightweight, High‐Performance Electromagnetic Interference Shielding and Joule Heating

Advanced Materials Interfaces, EarlyView.
Ultrathin MXene/EMF composite foams achieve a specific shielding efficiency of 749.6 dB.dB·cm3$\mathrm{dB}\cdot {\mathrm{cm}}^{3}$/g, while the silver‐enhanced MXene/Ag/EMF reaches 81.4 dB shielding effectiveness at just 1.0 mm thickness. Both composites exhibit rapid Joule heating, retain stability up to 250∘C$^\circ{\rm C}$, and withstand 1000 ...
Abdullah A. Mahmood, Mingxuan Li, Vahid Rad, Mehdi Zarei, Chen‐Yu Yeh, Masoud Soroush, Guangyong Li, Paul W. Leu   +7 more
wiley   +1 more source

Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

EPJ Photovoltaics, 2015
Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular.
Walder Cordula, Kellermann Martin, Wendler Elke, Rensberg Jura, von Maydell Karsten, Agert Carsten   +5 more
doaj   +1 more source

Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica

Nanoscale Research Letters, 2009
Silicon carbide nanowires have been synthesized at 1400 °C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst.
Luo Xiaogang, Ma Wenhui, Zhou Yang, Liu Dachun, Yang Bin, Dai Yongnian   +5 more
doaj   +1 more source

Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations

Heliyon, 2019
Silicon carbide has been used in a variety of applications including solar cells due to its high stability. The high bandgap of pristine SiC, necessitates nonstoichiometric silicon carbide materials to be considered to tune the band gap for efficient ...
Noura D. Alkhaldi, Sajib K. Barman, Muhammad N. Huda   +2 more
doaj   +1 more source

Halogen Surface Terminations in Ti3C2 MXenes for Interface Engineering in Perovskite Solar Cells

Advanced Materials Interfaces, EarlyView.
Controlled halogen surface terminations in Ti3C2${\rm Ti}_3{\rm C}_2$ MXenes enable the isolation of structure‐property relationships, revealing how –Cl and –Br terminations influence interlayer spacing, electronic behavior, and work function. When incorporated into IT‐4F‐based interfacial layers, these MXenes modulate interfacial processes and device ...
Morgana Müller de França, Sara Pescetelli, Antonio Agresti, Jhionathan de Lima, Martin Ignacio Broens, Aditya Sharma, Maiara de Jesus Bassi, Cristiano Francisco Woellner, Hanna Pazniak, Aldo di Carlo, Lucimara Stolz Roman   +10 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. [PDF]

, 2008
Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm.
Cheong, Kuan Yew, Purwadaria, Sunara, Lockman, Zainovia   +2 more
core   +1 more source

Effect of Silicon Carbide Fiber Length on the Flexural Strength and Flexural Modulus of Short Silicon Carbide Fiber-Reinforced Resin

Journal of Functional Biomaterials
Silicon carbide fibers have superior flexural properties and chemical stability compared to glass fibers. We investigated the flexural strength and modulus of an experimental, short silicon carbide fiber-reinforced resin.
Norimasa Taka, Yujin Aoyagi, Keito Miida, Mitsugu Kanatani, Hiroshi Ogawa   +4 more
doaj   +1 more source

Experimental investigation of semiconductor structures of the power source based on carbon-14

Физика волновых процессов и радиотехнические системы, 2019
The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a ...
V.I. Chepurnov, G.V. Puzyrnaya, A.V. Gurskaya, M.V. Dolgopolov, N.S. Anisimov   +4 more
doaj   +1 more source