Results 61 to 70 of about 130,070 (297)
Atomically engineered layered 2D Ti3CNTz carbonitride MXene exhibits ultrahigh heat and pressure sensitivity, enabling dual‐mode sensors with 300%–400% performance enhancement and durability for real‐time health‐monitoring interface devices. Precise nitrogen incorporation (e.g., Ti3C1.8N0.2Tz) boosts conductivity, enhancing temperature response, while ...
Debananda Mohapatra +12 more
wiley +1 more source
Silicon carbide semiconductor technology for high temperature and radiation environments [PDF]
Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented.
Matus, Lawrence G.
core +1 more source
An Engineered Living Material With Pro‐Angiogenic Activity Inducible by Near‐Infrared Light
NIR‐responsive engineered living materials (ELMs) for controlled angiogenesis: Near‐infrared (800 nm) light activates engineered probiotic bacteria within alginate‐based living materials to secrete a blood vessel‐regenerating protein. The released protein promotes pro‐angiogenic effects in endothelial networks and chick chorioallantoic membranes.
Anwesha Chatterjee +4 more
wiley +1 more source
Silicon carbide fibers have superior flexural properties and chemical stability compared to glass fibers. We investigated the flexural strength and modulus of an experimental, short silicon carbide fiber-reinforced resin.
Norimasa Taka +4 more
doaj +1 more source
Experimental investigation of semiconductor structures of the power source based on carbon-14
The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a ...
V.I. Chepurnov +4 more
doaj +1 more source
Tribological properties of sintered polycrystalline and single crystal silicon carbide [PDF]
Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa.
Buckley, D. H. +2 more
core +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide [PDF]
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this ...
Astakhov, G. V. +7 more
core +2 more sources
A MXene/PEDOT coating enables multimodal functionality and dual‐analyte detection of dopamine and serotonin in flexible microelectrode arrays while enhancing electrophysiological recording quality. The anti‐fouling, low‐impedance interface overcomes key limitations of conventional coatings, providing a robust and versatile platform to investigate the ...
Ilaria Gatti +8 more
wiley +1 more source
Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability.
Radu Hristu +4 more
doaj +1 more source

