Results 241 to 250 of about 261,592 (260)

Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes

SPIE Proceedings, 2008
This paper describes the properties of the homoepitaxial 4H-SiC layer, the fabrication and electrical parameters of Ti/4H-SiC Schottky barrier diode (SBD). The 4H-SiC epitaxial layers, grown on the commercially available 8°off-oriented Si-face(0001) single-crystal 4H-SiC wafers, have been performed at 1550~1600°C by using the step controlled epitaxy
G. Chen, Z. Y. Li, S. Bai, P. Han
openaire   +1 more source

Positron Mobility in Semi-Insulating 4H-SiC

Materials Science Forum, 1997
Recently, as a result of the observation of positron re-emission from crystalline 6H-SiC, it has been suggested that SiC may be a promising material for a field assisted positron moderator [1]. In this paper an attempt is made to more deeply analyze this potential application of SiC, by presenting data on the low field positron electric field drift in ...
Hu, YF, Gong, M, Brauer, G, Cheung, SH, Beling, CD, Fung, S, Ling, CC   +6 more
openaire   +3 more sources

Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide

Japanese Journal of Applied Physics, 2019
We propose a method to evaluate the carrier transport properties in the inversion layer of 4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) experimentally.
M. Noguchi, T. Iwamatsu, H. Amishiro, H. Watanabe, N. Miura, K. Kita, S. Yamakawa   +6 more
semanticscholar   +1 more source

Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications

IEEE Electron Device Letters, 2019
In this letter, we propose a 4H-SiC-based electrostatic discharge (ESD) protection circuitwith a new structure that has low on-resistance and good high-temperature characteristics while improving the high triggering voltage by applying an improved ...
Kyoung-Il Do, Byung-Seok Lee, Yong-Seo Koo   +2 more
semanticscholar   +1 more source

Low frequency noise in 4H-SiC BJTs

Semiconductor Science and Technology, 2004
Low frequency noise has been investigated in 4H-SiC BJTs for the first time. In BJTs with the current gain ? ? 10?15 and unity current gain frequency fT of about 1.5 GHz, the corner frequency fc was found to be fc = 2 ? 104 Hz. The value of the coefficient KB, which is the figure of merit for the noise in the region of noise proportional to squared ...
Sergey L. Rumyantsev, Michael E. Levinshtein, Anant K. Agarwal, John W. Palmour   +3 more
openaire   +1 more source

Monolayer growth modes of Re and Nb on 4H–SiC(0001) and 4H–SiC(0001¯)

Journal of Applied Physics, 2004
Auger electron spectroscopy (AES) and secondary electron emission have been used to specify the room temperature monolayer adsorption characteristics of Re and Nb on the basal, polar surfaces of 4H–SiC. Measurement of the secondary electron emission current relates the absorbed crystal current to the change in AES peak-to-peak signal intensities for ...
K. W. Bryant, M. J. Bozack
openaire   +1 more source

Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates

Journal of Electronic Materials, 1997
Synchrotron white beam x-ray topography (SWBXT) and Nomarski optical microscopy (NOM) have been used to characterize 4H-SiC epilayers and to study the character of triangular inclusions therein. 4H-SiC substrates misoriented by a range of angles from (0001), as well as (1 100) and (1120) oriented substrates were used.
Weimin Si, Michael Dudley, Hua Shuang Kong, Joe Sumakeris, Calvin Carter   +4 more
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Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications

Applied Physics Letters, 2019
This paper reports the demonstration of a 600 V 4H-SiC lateral MOSFET with a large current handling capability (10 A). To achieve a high breakdown voltage in a lateral architecture, a REduced SURface Field (RESURF) structure was implemented to alleviate ...
Nick Yun, J. Lynch, Woongje Sung
semanticscholar   +1 more source

Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer

IEEE Transactions on Electron Devices, 2019
In this article, the performance and triggering mechanism of the single-event burnout (SEB) of a 4H-SiC trench-gate (TG) MOSFET structure are evaluated by the 2-D numerical simulations.
Ying Wang, Mao Lin, Xing-ji Li, Xue Wu, Jianqun Yang, Mengtian Bao, Chenghao Yu, Fei Cao   +7 more
semanticscholar   +1 more source

Characterization of 4H-SiC Homoepitaxial Films on Porous 4H-SiC from Bis(trimethylsilyl)methane Precursor

Journal of The Electrochemical Society, 2003
4H-SiC homoepitaxial films were grown on 8° off-axis porous 4H-SiC (0001) faces in the temperature range of 1280-1510°C by chemical vapor deposition from bis(trimethylsilyl)methane (BTMSM) precursor. The activation energy for growth was 5.6 kcal/ mol, indicating that the film growth is dominated by the diffusion-limited mechanism.
Jae Kyeong Jeong, Hyeong Joon Kim
openaire   +1 more source