Results 151 to 160 of about 83,436 (246)

Porous Bi2S3 Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting‐Point Metal Volatilization

open access: yesAdvanced Materials, EarlyView.
By introducing FeCoNi medium‐entropy alloy, the bismuth sulfide (Bi2S3) material achieves a record‐high ZT of 1.1 at 773 K, owing to the solid‐states replacement reaction and the volatilization of low melting‐point metal. This strategy is also applicable to other sulfur‐based thermoelectric materials.
Zi‐Yuan Wang   +9 more
wiley   +1 more source

Recent Progress on Flexible Multimodal Sensors: Decoupling Strategies, Fabrication and Applications

open access: yesAdvanced Materials, EarlyView.
In this review, we establish a tripartite decoupling framework for flexible multimodal sensors, which elucidates the underlying principles of signal crosstalk and their solutions through material design, structural engineering, and AI algorithms. We also demonstrate its potential applications across environmental monitoring, health monitoring, human ...
Tao Wu   +10 more
wiley   +1 more source

Enhancing Grayscale E‐Beam Lithography: Thermal Treatment of Novolak‐Based Resist for 3D Nanostructures

open access: yesAdvanced Materials Interfaces, EarlyView.
Surface roughness and chemistry of novolak‐based grayscale resists are dependent on both exposure dose and post‐exposure thermal treatment. The observed trends align with the viscoelastic phase separation model and underscore the need to consider both thermodynamic and kinetic factors in resist processing. By tailoring thermal treatment, it is possible
Rahul Singh   +4 more
wiley   +1 more source

Designing Defect Structure and Interfacial Strain in an Epitaxial VN Bilayer Film by Tailoring N Concentration

open access: yesAdvanced Materials Interfaces, EarlyView.
The N concentration in an epitaxial VN bilayer is tailored from overstoichiometric V0.49N0.51 to understoichiometric V0.56N0.44. Based on ab initio, diffraction, and microscopy data, the overstoichiometric V0.49N0.51 layer contains V vacancies, N Frenkel pairs, and a high density of dislocations.
Marcus Hans   +7 more
wiley   +1 more source

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