Results 171 to 180 of about 6,734,093 (295)

Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics

open access: yesAdvanced Science, EarlyView.
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu   +13 more
wiley   +1 more source

Advances in Josephson Junction Materials and Processes Toward Practical Quantum Computing

open access: yesAdvanced Science, EarlyView.
Emerging materials for quantum computing, including crystalline materials, two‐dimensional van der Waals materials, two‐dimensional electron gas systems, ferromagnets, and unconventional (e.g., d‐wave) superconductors, offer opportunities to engineer next‐generation Josephson junctions.
Hyunseong Kim   +11 more
wiley   +1 more source

Single-Power-Conversion Series-Resonant AC-DC Converter with High Efficiency

open access: yesThe Transactions of the Korean Institute of Power Electronics, 2016
Seo-Gwang Jeong   +3 more
openaire   +2 more sources

Design of Resonant DC/DC Converter for Fuel Cell Application

open access: yes
In order to use hydrogen fuel cells in domestic applications either as main power supply or backup source, their low DC output voltage has to be matched to the level and frequency of the utility grid AC voltage.
Andreičiks, Aleksandrs   +2 more
core  

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko   +3 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

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