Results 181 to 190 of about 6,734,093 (295)

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

open access: yesAdvanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe   +11 more
wiley   +1 more source

Al1−xHfxN$\text{Al$_{1-x}$Hf$_{x}$N}$ Thin Films with Enhanced Piezoelectric Responses for GHz Surface Acoustic Wave Devices

open access: yesAdvanced Electronic Materials, EarlyView.
Reactively sputtered wurtzite Al1‐xHfxN thin films, exhibiting strong c‐axis texture and enhanced piezoelectric response, are demonstrated as a cost‐effective alternative to Al1‐xScxN. X‐ray absorption spectroscopy reveals that cross‐gap N 2p–Hf 5d hybridization increases the Born effective charge and enables a multifold increase in piezoelectric ...
Laura I. Wagner   +14 more
wiley   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo   +7 more
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

Fuel cell PV fed hybrid energy sources for 3 phase matrix converter using 3D Space Vector Modulation. [PDF]

open access: yesSci Rep
Palanisamy R   +7 more
europepmc   +1 more source

A Compact Resistively Loaded Metamaterial Absorber for 2.4 GHz RF Energy Harvesting With Impedance‐Matched Rectifier Analysis

open access: yesAdvanced Electronic Materials, EarlyView.
A compact resistively loaded metamaterial absorber captures RF energy at 2.4 GHz and directs most of the accepted power to modeled loads. The resonant response is confirmed experimentally for the fabricated absorber, while an impedance‐matched rectifier is evaluated through simulation. The stage‐wise results distinguish absorber, rectifier, and cascade
Md. Murad Kabir Nipun, Md. Jahedul Islam
wiley   +1 more source

Wireless acoustic-driven current source achieving nanoampere-level at millimeter-scale. [PDF]

open access: yesNat Commun
Yuan Y   +15 more
europepmc   +1 more source

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