Results 131 to 140 of about 488,523 (143)
Some of the next articles are maybe not open access.
Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS
Physica B: Condensed Matter, 1999K Goscinski +2 more
exaly
Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements
Materials Science in Semiconductor Processing, 2006Marc Meuris +2 more
exaly
Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study
Physica B: Condensed Matter, 2014Leopold Scheffler, Vl Kolkovsky
exaly
Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS
Physica Status Solidi (A) Applications and Materials Science, 2019Katarzyna Gwozdz, Yuri Astrov
exaly
Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode
Materials Science in Semiconductor Processing, 2014J H Evans-Freeman +2 more
exaly
Investigations on the effect of contacts on p-type CdTe DLTS-measurements
Journal of Crystal Growth, 1999G Müller-Vogt
exaly

