Results 131 to 140 of about 488,523 (143)
Some of the next articles are maybe not open access.

Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS

Physica B: Condensed Matter, 1999
K Goscinski   +2 more
exaly  

Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

Materials Science in Semiconductor Processing, 2006
Marc Meuris   +2 more
exaly  

Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study

Physica B: Condensed Matter, 2014
Leopold Scheffler, Vl Kolkovsky
exaly  

Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS

Physica Status Solidi (A) Applications and Materials Science, 2019
Katarzyna Gwozdz, Yuri Astrov
exaly  

Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode

Materials Science in Semiconductor Processing, 2014
J H Evans-Freeman   +2 more
exaly  

On-line DLTS investigations of the mono- and di-vacancy in p-type silicon after low temperature electron irradiation

Nuclear Instruments & Methods in Physics Research B, 2002
Arne Nylandsted Larsen
exaly  

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