Results 1 to 10 of about 3,616,241 (297)

UV Sensitivity of MOS Structures with Silicon Nanoclusters [PDF]

Sensors, 2019
Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiOx films with x = 1.15 for 60 min in N2 at 1000 and 700 &
Diana Nesheva, Abraham Arias, Mario A Curiel   +2 more
exaly   +4 more sources

Modeling of A-DLTS Spectra of MOS Structures

Advances in Electrical and Electronic Engineering, 2008
Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor. Results presented here are basedessentially on the acoustic version of Deep Level Transient Spectroscopy (A-DLTS) measurements.
Hockicko, Peter, Sidor, Peter, Bury, Peter, Kúdelčík, Jozef, Jamnický, I.   +4 more
doaj   +5 more sources

Mannooligosaccharides modulate mucin O-glycan-gut microbe interactions and preserve the intestinal barrier in weaned piglets. [PDF]

J Anim Sci Biotechnol
Background The intestinal microbiota and mucosal barrier are closely intertwined, with mucin O-glycans playing a key role in maintaining intestinal homeostasis. However, how nutrition regulates mucin O-glycans remains poorly understood.
Liu S, Liu N, Qiu Y, Li H, Zhang F, Jiang Q, Wang J, Yin Y, Tan B, Ma X.   +9 more
europepmc   +2 more sources

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Open Physics, 2011
Peter Hockicko, Peter Bury
exaly   +2 more sources

Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation

Applied Physics Express, 2023
Understanding the traps in metal-oxide-semiconductor (MOS) structures is crucial in the fabrication of MOS transistors with high performance and reliability.
Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe   +4 more
doaj   +1 more source

Hybrid G/BN@2H-MoS₂ Nanomaterial Composites: Structural, Electronic and Molecular Adsorption Properties

Nanomaterials, 2022
Hybrid structures often possess superior properties to those of their component materials. This arises from changes in the structural or physical properties of the new materials.
Amal Al-Khaldi, Mohamed M. Fadlallah, Fawziah Alhajri, Ahmed A. Maarouf   +3 more
doaj   +1 more source

Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

Tạp chí Khoa học Đại học Huế: Khoa học Tự nhiên, 2020
This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz.
V. Q. Nha, L. V. Thang, H. T. Thuy Linh, N. I. Gorbachuk, N. X. Cuong   +4 more
doaj   +1 more source

Three-Dimensional MoS₂ Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties

Crystals, 2023
The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS2 nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N2 gas flow during the deposition process.
Sobin Mathew, Johannes Reiprich, Shilpashree Narasimha, Saadman Abedin, Vladislav Kurtash, Sebastian Thiele, Bernd Hähnlein, Theresa Scheler, Dominik Flock, Heiko O. Jacobs, Jörg Pezoldt   +10 more
doaj   +1 more source

Research progress of H2S sensors based on metal oxide semiconductor nanomaterials with one-dimensional structures

工程科学学报, 2023
The phenomenon that CuO resistors encounter gas changes opens the prelude to metal oxide semiconductors (MOSs) as gas sensing. From 1953 to 1968, the research and production of MOS gas sensors were unified, but the gas-sensitive materials used at that ...
Ruru LI, Kaiyi WANG, Shian MI, Yaping LIU, Ze CHEN, Xitao YIN, Xiaoguang MA   +6 more
doaj   +1 more source

Black Phosphorus-Molybdenum Disulfide Hetero-Junctions Formed with Ink-Jet Printing for Potential Solar Cell Applications with Indium-Tin-Oxide

Crystals, 2021
In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture.
Ravindra Ketan Mehta, Anupama Bhat Kaul
doaj   +1 more source