Results 1 to 10 of about 14,423,885 (352)
Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation [PDF]
Applied Physics Express, 2023 Understanding the traps in metal-oxide-semiconductor (MOS) structures is crucial in the fabrication of MOS transistors with high performance and reliability.
Takuma Kobayashi +4 more
doaj +3 more sources
UV Sensitivity of MOS Structures with Silicon Nanoclusters [PDF]
Sensors, 2019 Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiOx films with x = 1.15 for 60 min in N2 at 1000 and 700 &
Mario Curiel +10 more
doaj +2 more sources
Radiation Hardness of Mos Structures Exposed to High-Energy Ions [PDF]
Communications, 2006 MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated MOS ...
Ladislav Harmatha +2 more
doaj +2 more sources
Dielectric Properties and Breakdown of the Gate Oxide in the MOS Structure [PDF]
Communications, 2010 The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed using the Weibull statistical analysis.
Ladislav Harmatha +2 more
doaj +2 more sources
Open Physics, 2009 Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor. Results presented here are basedessentially on the acoustic version of Deep Level Transient Spectroscopy (A-DLTS) measurements.
Bury Peter +5 more
doaj +4 more sources
Journal of Alloys and Compounds, 2018 Two-dimensional (2D) nanomaterials have become a new class of microwave absorption (MA) materials due to their high specific surface area and peculiar electronic properties.
Deqing Zhang +2 more
exaly +2 more sources
Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods [PDF]
Advances in Electrical and Electronic Engineering, 2004 The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods.
Pavol Pisecny +4 more
doaj +1 more source
Modeling of A-DLTS Spectra of MOS Structures [PDF]
Advances in Electrical and Electronic Engineering, 2008 Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor.
Peter Hockicko +4 more
doaj +2 more sources
Nanomaterials, 2022 Hybrid structures often possess superior properties to those of their component materials. This arises from changes in the structural or physical properties of the new materials.
Amal Al-Khaldi +3 more
doaj +1 more source
Tạp chí Khoa học Đại học Huế: Khoa học Tự nhiên, 2020 This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz.
V. Q. Nha +4 more
doaj +1 more source