Results 41 to 50 of about 14,423,885 (352)
Challenges of High-Performance and High-Reliablity in SiC MOS Structures
Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally grown on 4H-SiC (0001) wafer have been investigated for a realization of SiC MOS power devices.
J. Senzaki +6 more
semanticscholar +1 more source
ABSTRACT Background Acute lymphoblastic leukemia (ALL) is the most common pediatric cancer, with an overall survival now surpassing 90% in developed countries. However, treatments are not without adverse effects. In this study, we apply the severe toxicity‐free survival (STFS) framework to determine the prevalence of 21 physician‐defined severe ...
Lane Collier +10 more
wiley +1 more source
Analysis of surface generation mechanisms in MOS capacitors [PDF]
This paper demonstrates the extraction of MOS capacitor minority carrier generation lifetime and surface generation velocity from the measurement of deep-depletion capacitance transient.
Tanner, Philip +9 more
core +1 more source
MoS2@ZnO Nanoheterostructures Prepared by Electrospark Erosion for Photocatalytic Applications
MoS2@ZnO nanoheterostructures were synthesized by electrospark erosion of zinc granules in a hydrogen peroxide solution and simultaneous addition of MoS2 nanostructured powder into the reaction zone.
Vladimir An +8 more
doaj +1 more source
ABSTRACT Introduction The use of herbal medical preparation (HMP) is rising among pediatric oncology patients, often to manage treatment‐related symptoms. Their effectiveness remains uncertain, and the risk of herb–drug interactions is underestimated.
Orianne Mahot +6 more
wiley +1 more source
Modelo do descasamento (Mismatch) entre transistores MOS: [tese] [PDF]
Tese (Doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-graduação em Engenharia ElétricaDiversos modelos teóricos para o descasamento entre dispositivos na tecnologia MOS foram propostos desde a década de '80, sendo
Klimach, Hamilton
core
Gate dielectrics: process integration issues and electrical properties
In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures ...
Udo Schwalke
doaj +1 more source
Since their discovery, MXenes have conferred various intriguing features because of their distinctive structures. Focus has been placed on using MXenes in electrochemical energy storage including a supercapacitor showing significant and promising ...
Muhammad Akmal Kosnan +4 more
doaj +1 more source
ABSTRACT In 2018, the Texas Children's Cancer and Hematology Center Leukemia Program implemented a practice standard to support the transition from treatment to survivorship that includes shared, alternating care between leukemia and survivorship clinicians and a reminder to refer survivors to the long‐term survivor clinic (LTSC) 2 years after ...
Ji Yun Tark +9 more
wiley +1 more source
Improved neuron MOS-transistor structures for integrated neural network circuits [PDF]
The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation, thereby simulating the function of biological neurons ...
Franssila, Sami +5 more
core +1 more source

