Results 1 to 10 of about 140 (98)
Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers
Open Physics, 2011 A set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post ...
Hockicko Peter +5 more
doaj +3 more sources
Mathematical Models for Acoustic Spectra Simulation
Communications, 2010 The experimentally obtained acoustic spectra of some investigated materials; particularly the ion conductive glasses and MOS (metal-oxide-semiconductor) structures are analyzed using suitable theoretical models and mathematical procedure to fit the ...
Peter Hockicko +4 more
doaj +2 more sources
Communications, 2014 The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various temperatures to stabilize the structure and to decrease the interface states density.
Peter Bury +5 more
doaj +2 more sources
Modeling of A-DLTS Spectra of MOS Structures [PDF]
Advances in Electrical and Electronic Engineering, 2008 Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor.
Peter Hockicko +4 more
doaj +1 more source
Spectroscopic Signatures of Structural Disorder and Electron-Phonon Interactions in Trigonal Selenium Thin Films for Solar Energy Harvesting. [PDF]
Small MethodsSelenium plays hard to get ‐ volatile, low radiative efficiency, and highly sensitive to processing. Using a closed‐space encapsulation strategy, we probe room‐temperature photoluminescence and quantify structural disorder, showing how precise structural control can turn selenium into a high‐performance optoelectronic material of tomorrow.
Nielsen RS +9 more
europepmc +2 more sources
Acoustoelectric Investigation of Deep Centers in Bulk and Multilayered Semiconductors
Communications, 2003 Two basic versions of the acoustic deep-level transient spectroscopy (A-DLTS) technique based on the acoustoelectric effect resulting from the interaction between an acoustic wave and interfaces have been used to study deep centers in semiconductor ...
Peter Bury +2 more
doaj +1 more source
The Journal of Physiology, Volume 601, Issue 20, Page 4491-4538, 15 October 2023., 2023 Abstract figure legend Acute and chronic stress exert wide‐ranging effects across the gut–brain axis. In the case of acute stress, the enteric nervous system may be activated and gut contractility modified. This is associated with altered serotonin metabolism in the gastrointestinal tract as well as activation of the innate immune system and ...
Sarah‐Jane Leigh +9 more
wiley +1 more source
Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy
physica status solidi (a), Volume 220, Issue 16, August 2023., 2023 I–V characteristics investigation in the function of temperature shows barrier height inhomogeneities for vertical GaN Schottky diodes. These inhomogeneities are a common and crucial issue for power device application. Their potential origin (strain, doping variation, electrically active defects) is studied using Raman spectroscopy and deep‐level ...
Maroun Dagher +11 more
wiley +1 more source
Halide Perovskites and Their Derivatives for Efficient, High-Resolution Direct Radiation Detection: Design Strategies and Applications. [PDF]
Adv MaterLead‐halide perovskites, and their bismuth‐based derivatives, have given rise to X‐ray detectors that perform orders of magnitude better than incumbent technologies. Herein, the principles behind these rapid improvements in performance are discussed, along with the challenges for the commercialization of these new technologies, and their wider impact ...
Dudipala KR, Le TH, Nie W, Hoye RLZ.
europepmc +2 more sources
Investigation of deep defects in nanocrystalline-Si/Si interfaces using acoustic spectroscopy
, 2017 A set of structures with nanocrystalline-Si/Si interfaces formed on p-type Si substrate appropriated for photovoltaic application was prepared. The Acoustic DLTS technique based on the acoustoelectric response signal produced by the structure when a ...
Peter Bury +3 more
core +1 more source