Results 31 to 40 of about 24,512 (305)
Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures [PDF]
Journal of Advanced Dielectrics, 2016 The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal–oxide–semiconductor (MOS) structures is reported in this communication.
Chaitali Chakraborty, Chayanika Bose
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Temperature influences of the interfacial layer in MOS (Pt/TiO2/Si) structures
Конденсированные среды и межфазные границы, 2023 In this paper present I-V and C-V electrical characteristics of MOS (Pt/TiO2/Si) were reported. In the I-V characteristics the various electric parameter estimated such as the ideality factor (n), barrier height (FB), leakage current (Ic) and saturation
H. D. Chandrashekara, P. Poornima
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Open Physics, 2015 This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon ...
Nesheva Diana +9 more
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Heteronanostructural metal oxide-based gas microsensors
Microsystems & Nanoengineering, 2022 The development of high-performance, portable and miniaturized gas sensors has aroused increasing interest in the fields of environmental monitoring, security, medical diagnosis, and agriculture. Among different detection tools, metal oxide semiconductor
Lin Liu +7 more
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Floating-gate MOS structures and applications [PDF]
, 2008 Floating-gate MOS transistor (FGMOS) has proved to be suitable for low-voltage analog applications, owing to its threshold voltage programmability.
Rajput, S. S. +2 more
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Study and Simulation of Radiation Effects on MOS Structures (1).pdf
, 2022 MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm 2 and 1010 cm 2 were investigated by capacitance measuring methods (C–V, C–t), completed by quasistatic low-frequency C–V and DLTS measurements.
ganesh E N (12315038)
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Distributions of electric parameters in MOS structures on 3C-SiC substrate
Open Physics, 2013 In this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference φMS, the barrier height at the gate-dielectric interface EBG and the flat-band in semiconductor ...
Piskorski Krzysztof +3 more
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Nanomaterials, 2022 The objective of this study is to investigate the synthesis and influence of MoS2 on carbon nanowalls (CNWs) as supercapacitor electrodes. The synthesis of MoS2 on CNW was achieved by the introduction of hydrogen remote plasma from ammonium ...
Jin-Ha Shin +2 more
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MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness
Energies, 2022 Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices.
Jinbing Cheng +7 more
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MoS2@ZnO Nanoheterostructures Prepared by Electrospark Erosion for Photocatalytic Applications
Nanomaterials, 2021 MoS2@ZnO nanoheterostructures were synthesized by electrospark erosion of zinc granules in a hydrogen peroxide solution and simultaneous addition of MoS2 nanostructured powder into the reaction zone.
Vladimir An +8 more
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