Results 11 to 20 of about 3,616,241 (297)
Radiation Hardness of Mos Structures Exposed to High-Energy Ions
Communications, 2006 MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated MOS ...
Ladislav Harmatha +2 more
doaj +2 more sources
Dielectric Properties and Breakdown of the Gate Oxide in the MOS Structure
Communications, 2010 The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed using the Weibull statistical analysis.
Ladislav Harmatha +2 more
doaj +2 more sources
The impact of low energy proton damage on the operational characteristics of EPIC-MOS CCDs [PDF]
, 2003 The University of Tübingen 3.5 MeV Van de Graaf accelerator facility was used to investigate the effect of low energy protons on the performance of the European Photon Imaging Camera (EPIC), metal–oxide semiconductor (MOS), charge coupled devices (CCDs).
Abbey, AF +8 more
core +6 more sources
Electronic structure of the Mo(001) surface [PDF]
Physical Review B, 1993 We report computed results of the surface band structures of a molybdenum (001) surface by employing a self-consistent semirelativistic version of the full potential linearized augmented-plane-wave method. Computation was carried out for a seven-layer slab of bulk-truncated (1\ifmmode\times\else\texttimes\fi{}1) Mo(001) surface, ignoring the spin-orbit
HONG S. C, CHUNG J. W
openaire +3 more sources
Biosensors, 2023 Cancer is a common illness with a high mortality. Compared with traditional technologies, biomarker detection, with its low cost and simple operation, has a higher sensitivity and faster speed in the early screening and prognosis of cancer.
Ziyue Qin, Jiawei Zhang, Shuang Li
doaj +1 more source
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
core +1 more source
Communications, 2014 The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various temperatures to stabilize the structure and to decrease the interface states density.
Peter Bury +5 more
doaj +1 more source
Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Materials Research Express, 2020 Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
doaj +1 more source
A framework for hybrid dynamic evolutionary algorithms : multiple offspring sampling (MOS) [PDF]
, 2009 Evolutionary Algorithms (EAs) are a set of optimization techniques that have become incredibly popular in the last decades. As they are general purpose algorithms, they have been applied to a wide range of problems, many of them from industrial or ...
LaTorre de la Fuente, Antonio
core +1 more source
Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
IEEE Journal of the Electron Devices Society, 2017 A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed.
Sung-Min Hong, Junsung Park
doaj +1 more source