Results 11 to 20 of about 14,423,885 (352)
Crystals, 2023 The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS2 nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N2 gas flow during the deposition process.
Sobin Mathew +10 more
doaj +1 more source
工程科学学报, 2023 The phenomenon that CuO resistors encounter gas changes opens the prelude to metal oxide semiconductors (MOSs) as gas sensing. From 1953 to 1968, the research and production of MOS gas sensors were unified, but the gas-sensitive materials used at that ...
Ruru LI +6 more
doaj +1 more source
Crystals, 2021 In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture.
Ravindra Ketan Mehta, Anupama Bhat Kaul
doaj +1 more source
Study and Simulation of Radiation Effects on MOS Structures (1).pdf [PDF]
, 2022 MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm 2 and 1010 cm 2 were investigated by capacitance measuring methods (C–V, C–t), completed by quasistatic low-frequency C–V and DLTS measurements.
ganesh E N (12315038)
core +1 more source
Biosensors, 2023 Cancer is a common illness with a high mortality. Compared with traditional technologies, biomarker detection, with its low cost and simple operation, has a higher sensitivity and faster speed in the early screening and prognosis of cancer.
Ziyue Qin, Jiawei Zhang, Shuang Li
doaj +1 more source
AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
core +1 more source
Communications, 2014 The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various temperatures to stabilize the structure and to decrease the interface states density.
Peter Bury +5 more
doaj +1 more source
Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Materials Research Express, 2020 Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
doaj +1 more source
Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
IEEE Journal of the Electron Devices Society, 2017 A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed.
Sung-Min Hong, Junsung Park
doaj +1 more source
Electronic structure of the Mo(001) surface [PDF]
Physical Review B, 1993 We report computed results of the surface band structures of a molybdenum (001) surface by employing a self-consistent semirelativistic version of the full potential linearized augmented-plane-wave method. Computation was carried out for a seven-layer slab of bulk-truncated (1\ifmmode\times\else\texttimes\fi{}1) Mo(001) surface, ignoring the spin-orbit
HONG S. C, CHUNG J. W
openaire +3 more sources