Results 11 to 20 of about 24,512 (305)

UV Sensitivity of MOS Structures with Silicon Nanoclusters [PDF]

Sensors, 2019
Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiOx films with x = 1.15 for 60 min in N2 at 1000 and 700 &
Mario Curiel, Nicola Nedev, Judith Paz, Oscar Perez, Benjamin Valdez, David Mateos, Abraham Arias, Diana Nesheva, Emil Manolov, Roumen Nedev, Valeri Dzhurkov   +10 more
doaj   +2 more sources

Radiation Hardness of Mos Structures Exposed to High-Energy Ions

Communications, 2006
MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated MOS ...
Ladislav Harmatha, L. Stuchlikova, P. Pisecny   +2 more
doaj   +2 more sources

Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation

Applied Physics Express, 2023
Understanding the traps in metal-oxide-semiconductor (MOS) structures is crucial in the fabrication of MOS transistors with high performance and reliability.
Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe   +4 more
doaj   +2 more sources

Dielectric Properties and Breakdown of the Gate Oxide in the MOS Structure

Communications, 2010
The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed using the Weibull statistical analysis.
Ladislav Harmatha, Peter Valent, Juraj Racko   +2 more
doaj   +2 more sources

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Open Physics, 2009
Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor. Results presented here are basedessentially on the acoustic version of Deep Level Transient Spectroscopy (A-DLTS) measurements.
Bury Peter, Kobayashi Hikaru, Takahashi Masao, Imamura Kentaro, Sidor Peter, ÄŒernobila FrantiÅ¡ek   +5 more
doaj   +4 more sources

Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods

Advances in Electrical and Electronic Engineering, 2004
The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods.
Pavol Pisecny, Lubica Stuchlikova, Ladislav Harmatha, Milan Tapajna, Otto Csabay   +4 more
doaj   +1 more source

Modeling of A-DLTS Spectra of MOS Structures [PDF]

Advances in Electrical and Electronic Engineering, 2008
Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor.
Peter Hockicko, Peter Sidor, Peter Bury, Jozef Kudelcik, Igor Jamnicky   +4 more
doaj   +1 more source

Hybrid G/BN@2H-MoS₂ Nanomaterial Composites: Structural, Electronic and Molecular Adsorption Properties

Nanomaterials, 2022
Hybrid structures often possess superior properties to those of their component materials. This arises from changes in the structural or physical properties of the new materials.
Amal Al-Khaldi, Mohamed M. Fadlallah, Fawziah Alhajri, Ahmed A. Maarouf   +3 more
doaj   +1 more source

Three-Dimensional MoS₂ Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties

Crystals, 2023
The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS2 nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N2 gas flow during the deposition process.
Sobin Mathew, Johannes Reiprich, Shilpashree Narasimha, Saadman Abedin, Vladislav Kurtash, Sebastian Thiele, Bernd Hähnlein, Theresa Scheler, Dominik Flock, Heiko O. Jacobs, Jörg Pezoldt   +10 more
doaj   +1 more source

Research progress of H2S sensors based on metal oxide semiconductor nanomaterials with one-dimensional structures

工程科学学报, 2023
The phenomenon that CuO resistors encounter gas changes opens the prelude to metal oxide semiconductors (MOSs) as gas sensing. From 1953 to 1968, the research and production of MOS gas sensors were unified, but the gas-sensitive materials used at that ...
Ruru LI, Kaiyi WANG, Shian MI, Yaping LIU, Ze CHEN, Xitao YIN, Xiaoguang MA   +6 more
doaj   +1 more source