Results 21 to 30 of about 14,423,885 (352)
Stimulation in fullerene for adsorbing pollutant gases: A review
Chemical Physics Impact, 2023 The catalytic activities of fullerene are affected largely by different shapes and surface arrangements influencing catalyst activity and stability a lot. Surface structures of metal oxides (MOs) adsorbed on surfaces of C60-fullerene can show gas sensing
Pratibha S Agrawal +4 more
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, 2017 We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (Dit) near the conduction band edge (EC) of SiC (0001) MOS structures.
Takuma Kobayashi, J. Suda, T. Kimoto
semanticscholar +1 more source
Charge states of MOS structures [PDF]
, 2022 Проведен анализ процессов, происходящих на поверхности МОП-структур во время плазменной обработки, причины возникновения зарядовых состояниях и их влияние на параметры выходного изделия.
Тихон, О. И. +1 more
core
Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2
Nanomaterials, 2020 Antimonene is found to be a promising material for two-dimensional optoelectronic equipment due to its broad band gap and high carrier mobility. The van der Waals heterostructure, as a unique structural unit for the study of photoelectric properties, has
Congcong Zhou, Xiaodan Li, Taotao Hu
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Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
, 2016 . The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates.
A. Taube +7 more
semanticscholar +1 more source
Open Physics, 2015 This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon ...
Nesheva Diana +9 more
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I–U Characteristics of MOS Structures on Polycrystalline Silicon [PDF]
, 1989 Current-voltage (I–U) characteristics of MOS structures on polycrystalline silicon are investigated. A model based on the carrier transport through the traps in the oxide is described to explain the I–U characteristics.Es werden Strom-Spannungs(I–U ...
Lakshmi, MVS, Ramkumar, K
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Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures [PDF]
Journal of Advanced Dielectrics, 2016 The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal–oxide–semiconductor (MOS) structures is reported in this communication.
Chaitali Chakraborty, Chayanika Bose
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Temperature influences of the interfacial layer in MOS (Pt/TiO2/Si) structures
Конденсированные среды и межфазные границы, 2023 In this paper present I-V and C-V electrical characteristics of MOS (Pt/TiO2/Si) were reported. In the I-V characteristics the various electric parameter estimated such as the ideality factor (n), barrier height (FB), leakage current (Ic) and saturation
H. D. Chandrashekara, P. Poornima
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Floating-gate MOS structures and applications [PDF]
, 2008 Floating-gate MOS transistor (FGMOS) has proved to be suitable for low-voltage analog applications, owing to its threshold voltage programmability.
Rajput, S. S. +2 more
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