Results 21 to 30 of about 24,512 (305)
Tạp chí Khoa học Đại học Huế: Khoa học Tự nhiên, 2020 This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz.
V. Q. Nha +4 more
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Crystals, 2021 In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture.
Ravindra Ketan Mehta, Anupama Bhat Kaul
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Biosensors, 2023 Cancer is a common illness with a high mortality. Compared with traditional technologies, biomarker detection, with its low cost and simple operation, has a higher sensitivity and faster speed in the early screening and prognosis of cancer.
Ziyue Qin, Jiawei Zhang, Shuang Li
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AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
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Electronic structure of the Mo(001) surface [PDF]
Physical Review B, 1993 We report computed results of the surface band structures of a molybdenum (001) surface by employing a self-consistent semirelativistic version of the full potential linearized augmented-plane-wave method. Computation was carried out for a seven-layer slab of bulk-truncated (1\ifmmode\times\else\texttimes\fi{}1) Mo(001) surface, ignoring the spin-orbit
HONG S. C, CHUNG J. W
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Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
IEEE Journal of the Electron Devices Society, 2017 A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed.
Sung-Min Hong, Junsung Park
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Communications, 2014 The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various temperatures to stabilize the structure and to decrease the interface states density.
Peter Bury +5 more
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Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Materials Research Express, 2020 Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
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Stimulation in fullerene for adsorbing pollutant gases: A review
Chemical Physics Impact, 2023 The catalytic activities of fullerene are affected largely by different shapes and surface arrangements influencing catalyst activity and stability a lot. Surface structures of metal oxides (MOs) adsorbed on surfaces of C60-fullerene can show gas sensing
Pratibha S Agrawal +4 more
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Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2
Nanomaterials, 2020 Antimonene is found to be a promising material for two-dimensional optoelectronic equipment due to its broad band gap and high carrier mobility. The van der Waals heterostructure, as a unique structural unit for the study of photoelectric properties, has
Congcong Zhou, Xiaodan Li, Taotao Hu
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