Results 51 to 60 of about 14,423,885 (352)
Plasmonic optoelectronic devices and metasurfaces [PDF]
EPJ Web of ConferencesWe report recent progress on optoelectronic devices and metasurfaces involving surface plasmons, enabled by metal-oxide-semiconductor (MOS) structures on Si and on epsilon-near-zero materials.
Berini Pierre
doaj +1 more source
Health Literacy, Self‐Efficacy and Knowledge of Sickle Cell Disease Among Caregivers
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background Sickle cell disease (SCD) is a hereditary blood disorder in which abnormal haemoglobin leads to severe anaemia, painful crises and organ failure. Caregivers’ health literacy (HL) – their ability to assess, understand and apply information, and interact with healthcare professionals – is crucial for managing children with SCD, yet ...
Melanie Bruinooge +6 more
wiley +1 more source
Computationally efficient quantum-mechanical technique to calculate direct tunnelling gate leakage current in metal-oxide-semiconductor structures [PDF]
, 2003 We propose a computationally efficient, accurate and numerically stable quantum- mechanical technique to calculate the direct tunneling (DT)gate current in metal-oxide-semiconductor (MOS) structures.
Haque, A, Hakim, MMA
core
Single event effects resulted by parasitic structures of MOS transistors in SOI CMOS ICs and their hardness [PDF]
, 2010 The paper describes the parasitic structures of MOS transistors in SOI CMOS ICs at first. Then the influences of the parasitic structures on single particles radiation effect of MOS transistors in SOI CMOS ICs are presented.
Zhongli Liu +9 more
core +1 more source
Nanomaterials, 2020 The ability to generate hydrogen in an economic and sustainable manner is critical to the realization of a future hydrogen economy. Electrocatalytic water splitting into molecular hydrogen using the hydrogen evolution reaction (HER) provides a viable ...
Po-Chia Huang +6 more
doaj +1 more source
A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
IEEE Transactions on Nuclear Science, 1980 An empirical model of radiation-induced interface states at the SiO2/Si interface in SiO2 MOS capacitors is developed. The formulation explicitly addresses the time-dependent two stage nature of the buildup process, and it gives the mathematical ...
F. B. McLean
semanticscholar +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background Adolescents with haematological malignancies face significant emotional and relational challenges, often accompanied by difficulties in communicating their needs within the healthcare context. To address these issues, a narrative‐based psycho‐educational intervention based on the creation and prescription of Ironic Medications was ...
Marta Stoppa +7 more
wiley +1 more source
Radiation-hardening of MOS structures [PDF]
, 1977 Characteristic graphs are presented for radiation hardened MOS structures for electron-hole pair yield, voltage--capacitance, oxide thickness--..delta..V, and anneal temperature--..delta..V ...
Derbenwick, G. F.
core
SIX-TERMINAL MOS STRUCTURES AND THEIR APPLICATIONS IN ELECTRONICALLY TUNABLE RESISTORS [PDF]
, 1996 THE MOS TRANSISTOR IS THE MOST POPULAR DEVICE IN INTEGRATED CIRCUITS INDUSTRY. IN SEVERAL CASES OF ANALOG WORK, SIGNIFICANT LIMITATIONS ARE ENCOUNTERED, STEMMING FROM THE OPERATION OF CONVENTIONAL MOSFETS AS FOUR-TERMINAL STRUCTURES.
Βαβελίδης, Κωνσταντίνος
core +1 more source
Crystals, 2020 In this study, we report a new method for the quick, green, and one-step preparation of few-layered molybdenum disulfide (MoS2) nanosheets with wide bandgap.
Mitra Mahdavi +2 more
doaj +1 more source