Characterization of the Optical and Electrical Properties of Proton-Irradiated 4H-Silicon Carbide [PDF]
, 2002 Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material.
Crockett, Heather C.
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Investigation of new semiinsulating behavior of III-V compounds [PDF]
The investigation of defect interactions and properties related to semiinsulating behavior of III-V semiconductors resulted in about twenty original publications, six doctoral thesis, one masters thesis and numerous conference presentations.
Lagowski, Jacek
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Measurements of Neutron Induced Surface and Bulk Defects in 4H Silicon Carbide [PDF]
, 2002 Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. The optical properties of the material are investigated using temperature-
Jones, Kent T.
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Quantum Dot bilayer laser diodes
, 2008 Optical communication was developed to allow high-speed and long-distance data transmission and is currently a £6bn market. This has also led to the adoption of optical technologies in other areas including the CD, DVD and medical imaging systems ...
Spencer, Peter David +1 more
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Right displacement of trachea to reduce right bronchial misplacement of left double lumen tube: a prospective, double-blind, randomized study. [PDF]
BMC Anesthesiol, 2022 Guan J +7 more
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Crystal growth of device quality GaAs in space [PDF]
The apparatus and techniques used in effort to determine the relationships between crystal growth and electronic properties are described with emphasis on electroepitaxy and melt-grown gallium aresenide crystal.
Gatos, H. C., Lagowski, J.
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Electrical Characterization of GaSb Based Semiconductors for 2-4 micrometers Diode Laser Applications [PDF]
, 1996 Deep Level Transient Spectroscopy (DLTS) was used to characterize the band offsets and deep levels in MBE grown GaSb-based semiconductors that are used in 2-4 µm laser diode structures. One of several deep level traps found in AlxGa1-xAsySb1-y (x=0, 0.5,
Johnstone, Daniel K.
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Danlou Tablets Inhibit Atherosclerosis in Apolipoprotein E-Deficient Mice by Inducing Macrophage Autophagy: The Role of the PI3K-Akt-mTOR Pathway. [PDF]
Front Pharmacol, 2021 Liu C +13 more
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A Hall-effect study of as-grown and hydrogenerated n-type ZnO layers grown by MOCVD [PDF]
, 2006 A series of as-grown ZnO layers have been electrically characterised by the temperature dependent (20 – 300 K) Hall-effect technique. The ZnO layers were grown by metal organic chemical vapour deposition (MOCVD) on glass substrates under various growth ...
Somhlahlo, Nomabali Nelisiwe
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