Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
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