Results 171 to 180 of about 7,051,549 (295)

Excellent Thermoelectric Performance Realized in SnSe Materials via Chemical Bond Tailoring Using GeTe as Molecule Scissors

open access: yesAdvanced Science, EarlyView.
The GeTe acting as “molecule scissors” can tailor chemical bond, the breaking of Ag‐Se bonds and the formation of Ge‐Se bonds occur in the A‐SnSe matrix, along with the formation of Ag2Se precipitates. This process helps to optimize the thermoelectric properties, and also improves its mechanical properties to a certain extent.
Xing Yang   +8 more
wiley   +1 more source

High‐Density‐Cluster Ru Catalyst Substitute for Pt/C Benchmark Improves Membrane Water Electrolysis

open access: yesAdvanced Science, EarlyView.
Yuan et al. report a high‐density, monodispersed Ru cluster catalyst featuring interfacial covalent bonds that modulate the electronic structure and optimize intermediate adsorption–desorption, thereby conferring pH‐universal HER activity with ampere‐level current densities and enabling the development of Pt‐free membrane electrodes.
Zhen Yuan   +7 more
wiley   +1 more source

Hydrogen Production from Ammonia Electrochemical Cracking

open access: yesAdvanced Science, EarlyView.
NH3 electrochemical cracking (e‐cracking) is a complementary technique to centralized thermal cracking for releasing H2 from NH3. In this article, we review recent advances in catalyst development for these cracking techniques and conduct a techno‐economic analysis (TEA) to evaluate the economic feasibility of e‐cracking.
Yike Ye   +4 more
wiley   +1 more source

Handbook of alkali-activated cements, mortars and concretes

open access: yes, 2015
This book provides an updated state-of-the-art review on new developments in alkali-activation. The main binder of concrete, Portland cement, represents almost 80% of the total CO2 emissions of concrete which are about 6 to 7% of the Planet's total CO2 ...
Torgal, Fernando Pacheco 1964-
core  

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte   +9 more
wiley   +1 more source

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