Results 161 to 170 of about 38,954 (267)

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

The stacking fault annihilation in a-plane AlN during high-temperature annealing

, 2023
Xiaojuan Sun, Jiaen Sui, Jianwei Ben, Hang Zang, Ke Jiang, Shanli Zhang, Shunpeng Lv, Zhiming Shi, Tong Wu, Dabing Li   +9 more
openalex   +2 more sources

Modeling and Measurement of Noise in Aluminium Nitride Piezoelectric MEMS

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
This work analyzes electrical noise in piezoelectric AlN MEMS devices using a combined measurement‐modeling approach. The framework separates sample and amplifier noise contributions and demonstrates close agreement between model and experiment at both room and cryogenic temperatures.
Sina Zare Pakzad, Patrick Egger, Negin Rahnemai Haghighi, Shareena Muringakodan, Mahdi Mortada, Proloy T. Das, Keith C. Schwab, Ulrich Schmid, Michael Schneider   +8 more
wiley   +1 more source

Immune Profiling the Axilla with Fine Needle Aspiration Is Feasible to Risk-Stratify Breast Cancer. [PDF]

Cancers (Basel)
Gore JA, Llewellyn AM, Lam CYR, Shields JD, Naidoo K.   +4 more
europepmc   +1 more source

Synthesis of nanosized AlN powder using novel nitridation route [PDF]

, 2007
Anjan Sil, Pankaj Verma
openalex  

Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Single‐domain κ‐Ga2O3 is systematically studied using advanced Raman spectroscopy, revealing over 100 Raman‐active phonon modes. These modes are compared with theoretical predictions and organized within a newly established nomenclature, offering a robust reference for future research.
Alwin Wüthrich, Benjamin M. Janzen, Roland Gillen, Hans Tornatzky, Andrea Ardenghi, Oliver Bierwagen, Anna Sacchi, Piero Mazzolini, Maximilian Ries, Temma Ogawa, Hiroyuki Nishinaka, Markus R. Wagner   +11 more
wiley   +1 more source

Dual phase high temperature Si₃N₄/Al(Ti)N films with tunable thermal conductivity. [PDF]

Nat Commun
Gao Z, Liu H, Sun J, Kulczyk-Malecka J, Liu X, Bousser E, Kelly P, Chiu YL, Withers PJ, Xiao P.   +9 more
europepmc   +1 more source

A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators

, 2005
S. Saravanan, Erwin Berenschot, Gijs Krijnen, Michael Curt Elwenspoek   +3 more
openalex   +2 more sources

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Single‐Crystal AlN Substrates In their Research Article (10.1002/aelm.202500393), Eungkyun Kim, Debdeep Jena, Huili Grace Xing, and co‐workers demonstrate single‐crystal high electron mobility transistors (XHEMTs) on bulk AlN substrates for the first time, delivering exceptional RF performance.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Development of a Rifapentine-Loaded Alendronate-Conjugated PLGA-PEG Nanosystem: A Novel Bone-Targeted Strategy for Osteoarticular Tuberculosis Treatment with Enhanced Drug Delivery and Bone Regeneration. [PDF]

Int J Nanomedicine
Wang Z, Wei H, Qiu X, Zhao B, Yang Z.
europepmc   +1 more source