Results 111 to 120 of about 40,640 (288)
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Correlation between Differential Fast Scanning Calorimetry and Additive Manufacturing Results of Aluminium Alloys. [PDF]
Kessler O +4 more
europepmc +1 more source
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
FEM Numerical and Experimental Study on Dimensional Accuracy of Tubes Extruded from 6082 and 7021 Aluminium Alloys. [PDF]
Leśniak D +8 more
europepmc +1 more source
A bikitaite‐infused cellulose separator is introduced for Li metal batteries, leveraging bikitaite zeolite's ion‐conductive properties to regulate Li+‐ion flux and suppress dendrite growth. The membrane design ensures uniform Li plating, enhanced electrolyte wettability, and robust thermal/mechanical stability, delivering stable performance and low ...
Isheunesu Phiri +2 more
wiley +1 more source
TALAT Lecture 1101: Resources and Production of Aluminium
This lecture illustrates the natural abundance of the element and the history of its extraction from the ore; it shows the properties of pure aluminium, outlines the importance of alloys to commercial development and shows the range of alloys available ...
Geoff Budd, Aluminium Federation, Birmingham, UK +1 more
core
Shoulder Related Temperature Thresholds in FSSW of Aluminium Alloys. [PDF]
Andrade DG +3 more
europepmc +1 more source
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
New approaches to casting hypereutectic Al-Si alloys to achieve simultaneous refinement of primary silicon and modification of eutectic silicon [PDF]
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel UniversityHypereutectic Al-Si alloys are of increasing interest for applications that require a combination of light weight and high wear resistance, such as pistons ...
Al-Helal, Kawther
core
Introduction. Solutions to car weight-bearing capacity problems currently tend to benefit from the properties of aluminium alloys. Aluminium alloy wagon units are about three times lighter than steel ones, which helps to carry more freight with the same ...
A. V. Lapa +2 more
doaj +1 more source

