Results 121 to 130 of about 55,413 (296)

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature. [PDF]

Materials (Basel), 2023
Yang Y, Liu Y, Wang L, Zhang S, Lu H, Peng Y, Wei W, Yang J, Feng ZC, Wan L, Klein B, Ferguson IT, Sun W.   +12 more
europepmc   +1 more source

High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility [PDF]

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described.
Bouldin, D. L., Feltner, W. R., Hollis, B. R., Routh, D. E.   +3 more
core   +1 more source

Modification Strategies of Carbon‐Based Electrodes From Structural Regulation to Multifunctional Integration

Advanced Science, EarlyView.
Tracing the evolution from structural regulation to multifunctional integration, this paper systematically analyzes modification strategies for carbon‐based electrodes. It evaluates how element doping, surface functionalization, and composite material design affect the electrode performance, and offers perspectives on future applications and challenges
Yunlei Wang, Shitao Dou, Yifan Wu, Mingguang Wang, Taibin Wu   +4 more
wiley   +1 more source

Selected fretting-wear-resistant coatings for titanium - 6-percent-aluminum - 4-percent-vanadium alloy [PDF]

A titanium - 6-percent-aluminum - 4-percent-vanadium alloy (Ti-6Al-4V) was subjected to fretting-wear exposures against uncoated Ti-6Al-4V as a baseline and against various coatings and surface treatments applied to Ti-6Al-4V.
Bill, R. C.
core   +1 more source

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

Advanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun, Yuyan Wang, Ruofei Hu, Yuyao Lu, Jun Xu, Xinyi Li, Bin Gao, He Qian, Jianshi Tang, Huaqiang Wu   +9 more
wiley   +1 more source

Aluminum Nitride Out-of-Plane Piezoelectric MEMS Actuators. [PDF]

Micromachines (Basel), 2023
Rabih AAS, Kazemi M, Ménard M, Nabki F.
europepmc   +1 more source

Ceramics in gas turbine: Powder and process characterization [PDF]

Some of the intrinsic properties of various forms of Si3N4 and SiC are listed and limitations of such materials' availability are pointed out. The essential features/parameters to characterize a batch of powder are discussed including the standard ...
Dutta, S.
core   +1 more source

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

Advanced Science, EarlyView.
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena, Cooper A. Voigt, Mengkun Tian, Anjan Goswami, Emily Toph, Moses Nnaji, Fanuel Mammo, Brent K. Wagner, Sungho Jeon, Wenshan Cai, Eric M. Vogel   +10 more
wiley   +1 more source

Influence of stoichiometry of aluminum nitride films composition on the dielectric response

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
The effect of non-stoichiometry of thin single-crystal layers of aluminum nitride (AlN) on their structure and dielectric properties was investigated. Thin AlN layers were grown by chloride-hydride epitaxy on a silicon substrate with a nanoscale buffer ...
A.V. Solnyshkin, I.T. Zezyanov, O.N. Sergeeva, S.A. Kukushkin, M.V. Staritsyn, S.S. Sharofidinov, N.V. Sharenkova, S.V. Senkevich, I.P. Pronin   +8 more
doaj   +1 more source