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Piezoelectric coefficient of aluminum nitride and gallium nitride
Journal of Applied Physics, 2000The piezoelectric coefficient d33 of aluminum nitride (AlN) and gallium nitride (GaN) thin films grown on silicon substrates by molecular beam epitaxy have been measured using a laser interferometer. X-ray diffraction reveals that the AlN and GaN films consist mainly of crystals with a hexagonal wurtzite structure. In order to grow epitaxial GaN films,
Leung, CM, Chan, HLW, Surya, C, Choy, CL
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Photorefractive effect in undoped aluminum nitride
Optics Letters, 2010We report our observation of the photorefractive effect in undoped aluminum nitride. We measured the coupling constant and the formation rate as a function of pump intensity at a wavelength of 405 nm in a two-wave mixing experiment. The photorefractive gain coefficient was 0.47 cm(-1) at I = 6.9 W/cm(2), and the actual saturated value was probably ...
Toru Nagai +3 more
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Ceramics International, 2005
Abstract Fine-grained AlN–AlN polytypoid composites doped with SiO 2 were prepared in situ by pressureless sintering of AlN–Al 2 O 3 mixtures (3.7 and 10.5 mol% Al 2 O 3 ) at 1870 °C using Y 2 O 3 as sintering aid. SiO 2 -doping (1 wt.%) was used to stabilize the AlN polytypoids and reduce the average grain size of the polytypoids.
Inger-Lise Tangen +4 more
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Abstract Fine-grained AlN–AlN polytypoid composites doped with SiO 2 were prepared in situ by pressureless sintering of AlN–Al 2 O 3 mixtures (3.7 and 10.5 mol% Al 2 O 3 ) at 1870 °C using Y 2 O 3 as sintering aid. SiO 2 -doping (1 wt.%) was used to stabilize the AlN polytypoids and reduce the average grain size of the polytypoids.
Inger-Lise Tangen +4 more
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1999
Aluminum nitride (A1N) has a large band gap (∼6 eV at 300 K), a high thermal conductivity (∼3.2 W cm−1 K1 at 300 K), and large piezoelectric constants (∼∣2−5∣×10−10 cm/V at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation properties, low dispersion of permittivity, and low dielectric loss. These make it useful for numerous device
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Aluminum nitride (A1N) has a large band gap (∼6 eV at 300 K), a high thermal conductivity (∼3.2 W cm−1 K1 at 300 K), and large piezoelectric constants (∼∣2−5∣×10−10 cm/V at 300 K) (see Ref. [1]). AIN has also excellent insulator and passivation properties, low dispersion of permittivity, and low dielectric loss. These make it useful for numerous device
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Formation of aluminum nitride by nitriding aluminum powder
Soviet Powder Metallurgy and Metal Ceramics, 1963Yu. D. Repkin, G. V. Samsonov
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