Results 261 to 270 of about 16,935 (310)

Reaction Synthesis of Aluminum Nitride–Boron Nitride Composites Based on the Nitridation of Aluminum Boride

Journal of the American Ceramic Society, 2002
Aluminum nitride–boron nitride (AlN–BN) composites were prepared based on the nitridation of aluminum boride (AlB 2 ). AlN powder was added to change the BN volume fraction in the obtained composites.
Guo‐Jun Zhang, Jian‐Feng Yang, Motohide Ando, Tatsuki Ohji   +3 more
openaire   +1 more source

Growth of epitaxial aluminum nitride and aluminum nitride/zirconium nitride superlattices on Si(111)

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1992
Growth of epitaxial aluminum nitride (AlN) and crystalline superlattices of aluminum nitride/zirconium nitride (AlN/ZrN) on Si(111) by ultrahigh-vacuum dc magnetron reactive sputtering has been studied. Detailed structural characterizations were carried out with techniques of x-ray diffraction, transmission electron microscopy, and reflection high ...
W. J. Meng, J. Heremans
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Fabrication and Characterization of Aluminum Nitride/Boron Nitride Nanocomposites by Carbothermal Reduction and Nitridation of Aluminum Borate Powders

Journal of Nanoscience and Nanotechnology, 2008
In order to fabricate aluminum nitride/boron nitride (AlN/BN) nanocomposites by pressureless sintering, the present study investigated the synthesis of AlN-BN nanocomposite powders by carbothermal reduction and nitridation of aluminum borate powders. Homogeneous mixtures of alumina (Al2O3), boric acid (H3BO3), and carbon powder were used to synthesize
Takafumi, Kusunose, Nobuaki, Sakayanagi, Tohru, Sekino, Yoichi, Ando   +3 more
openaire   +2 more sources

Phase Relations and Microstructural Development of Aluminum Nitride–Aluminum Nitride Polytypoid Composites in the Aluminum Nitride–Alumina–Yttria System

Journal of the American Ceramic Society, 2004
AlN–AlN polytypoid composite materials were prepared in situ using pressureless sintering of AlN–Al 2 O 3 mixtures (3.7–16.6 mol% Al 2 O 3
Inger‐Lise Tangen, Yingda Yu, Tor Grande, Ragnvald Høier, Mari‐Ann Einarsrud   +4 more
openaire   +1 more source

Composition and Microstructure of Chemically Vapor‐Deposited Boron Nitride, Aluminum Nitride, and Boron Nitride + Aluminum Nitride Composites

Journal of the American Ceramic Society, 1991
The composition and microstructure of dispersed‐phase ceramic composites containing BN and AIN as well as BN and AIN single‐phase ceramics prepared by chemical vapor deposition have been characterized using X‐ray diffraction, scanning electron microscopy, electron microprobe, and transmission electron microscopy techniques.
John A. Hanigofsky, Karren L. More, W. J. Lackey, Woo Y. Lee, Garth B. Freeman   +4 more
openaire   +1 more source

Aluminum nitride packaging

Proceedings International Symposium on Advanced Packaging Materials. Processes, Properties and Interfaces (IEEE Cat. No.99TH8405), 2003
Due to its high thermal conductivity (TC) and a low thermal expansion coefficient, which is comparable to that of Si, aluminum nitride (AlN) has been adopted for packages requiring high thermal dissipation. Kyocera has been conducting research and development on AlN for more than ten years, and has produced many kinds of AlN products, such as Cer-Quad ...
M. Ishida, T. Hasegawa, T. Iwaida, A. Knudsen   +3 more
openaire   +1 more source

Aluminum nitride nanotubes

Chemical Papers, 2016
An AlN nanotube (AlNNT) was theoretically predicted in 2003. In comparison with the carbon nanotubes, the AlNNTs are wide-band-gap nanostructures with high reactivity, high thermal stability and sharp electronic sensitivity toward some chemicals. The B3LYP predicts an HOMO–LUMO gap of 3.74–4.27 eV for zigzag AlNNTs, while the experimental bad gap of ...
Maziar Noei, Hamed Soleymanabadi, Ali Ahmadi Peyghan   +2 more
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Preparation of Aluminum Nitride–Silicon Carbide Nanocomposite Powder by the Nitridation of Aluminum Silicon Carbide

Journal of the American Ceramic Society, 2002
Aluminum nitride (AlN)–silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum‐silicon carbide (Al 4 SiC 4 ) with the specific surface area of 15.5 m 2 ·g −1
Itatani, K., Tsukamoto, R., Delsing, A.C.A., Hintzen, H.T.J.M., Okada, I.   +4 more
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Formation of Aluminum Nitride Films by Gas Nitriding

Key Engineering Materials, 2014
In this study, aluminum alloys were subjected to nitriding at 823 K for 0–18.0 ks using alumina and magnesium powders for improving their radiation performance. After nitriding, aluminum nitride films were formed on the aluminum substrate. The thickness of the formed films varied from 1.5 to 11 μm, and the color of the film surface was dark brown or ...
Masashi Yoshida, Zhou Tao, Noah Utsumi
openaire   +1 more source

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

MRS Proceedings, 1999
ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne ...
C. M. Lueng, H. L. W. Chan, W. K. Fong, C. Surya, C. L. Choy   +4 more
openaire   +1 more source