Results 61 to 70 of about 16,935 (310)

Synthesis and corrosion resistance of Cu-Al-N nanostructured thin films deposited through magnetron sputtering

Materials Research Express, 2021
Cu-Al-N thin films were deposited by means of the unbalanced magnetron cosputtering technique, varying the pulsed DC source power that is associated with the aluminum target.
D M Otálora Barrero, J J Olaya, A Duarte Moller   +2 more
doaj   +1 more source

POM‐Based Water Splitting Catalyst Under Acid Conditions Driven by Its Assembly on Carbon Nanotubes

Advanced Materials, EarlyView.
A newly‐engineered POM‐based electrocatalyst incorporating non‐innocent counter cations exhibits fast kinetics for either the OER or HER under strongly acidic conditions (1 m H2SO4), depending on whether it is assembled on carbon nanotubes (1@CNT) or physically mixed with them (1/CNT). In water‐splitting tests using a two‐electrode setup, these systems
Eugenia P. Quirós‐Díez, Melanie Guillén‐Soler, Carlos Herreros‐Lucas, Alejandro López‐Moreno, José Manuel Vila‐Fungueiriño, Antonio Luis Llamas‐Saiz, Karol Strutyński, Manuel Melle‐Franco, María del Carmen Giménez‐López   +8 more
wiley   +1 more source

Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture [PDF]

Журнал нано- та електронної фізики, 2014
The influence of technological parameters, such as discharge power, working gas pressure, growth surface temperature, on the formation mechanisms and main characteristics of aluminum nitride has been investigated in the work. On the basis of optimization
A.S. Kornyushchenko
doaj  

Polymorph‐Specific Electronic Transduction in WO3 during Molecular Sensing

Advanced Materials, EarlyView.
Metal‐oxide polymorphs with similar surface chemistry can nevertheless exhibit distinct sensing properties. In γ‐ and ε‐WO3, analyte adsorption appears comparable; yet, only ε‐WO3 induces a pronounced lattice electronic perturbation that accommodates charge in sub‐conduction band minimum states.
Matteo D'Andria, Meng Yin, Stefan Neuhauser, Vlasis G. Mavrantzas, Ying Chen, Ken Suzuki, Andreas T. Güntner   +6 more
wiley   +1 more source

Preparation and properties of a new high-energy metal (W) film/aluminum nitride system energy exchanger electrothermal pyrogenant

AIP Advances
In order to improve the safety and energy exchange efficiency of electric thermal pyrotechnic devices, a new energy exchange element technology of high energy metal (W) film/aluminum nitride ceramic was explored by taking advantage of the high thermal ...
Mi Zhou, Ming Li, Jie Lei, Jiao Li, Qingying Meng, Yin Wang, Honghai Tong, Minjie Diwu, Guofu Yin   +8 more
doaj   +1 more source

Investigation of structure, mechanical properties and crystallization of aluminum alloys containing aluminum oxide nanoparticles

MATEC Web of Conferences, 2018
A357 and 6082 aluminum alloys strengthened by aluminum nitride nanoparticles were obtained. The process of crystallization of the A357-0.5 wt% Al2O3 and 6082-0.5 wt% Al2O3 alloys was studied under conditions of varying the cooling rate. The A357 and 6082
Valikhov Vladimir, Kahidze Nikolay, Khrustalyov Anton, Zhukov Ilya, Vorozhtsov Alexander   +4 more
doaj   +1 more source

Aluminum Nitride Synthesized by Reduction and Nitridation of Alumina

Journal of the Ceramic Association, Japan, 1974
AlN powders were synthesized from high pure Al2O3 with reducing agent of high pure carbon in azotic atmosphere. Obtained powders were adequately pure in metalic impurities when the nitriding processes were proceeded in high temperature such as above 1800°C.Oxygen in the powders were measured by the fast neutron activation analysis.
SAKAI, Tosikazu, IWATA, Minoru
openaire   +2 more sources

Thermal Effects of Aluminum Nitride

, 2011
The purpose of this study, using high vacuum sputtering machines, is to sputter multi-layer of aluminum nitride composite layer (AlNx) for the solar selective absorbing film. Using UV spectroscopy, gloss meter, thermometer, etc.
Wern Dare Jheng, Shao Hsien Chen, Chien Chon Chen   +2 more
core   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications

Discover Electronics
A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high ...
Sana Nasir, Gul Hassan, Habib Ahmad
doaj   +1 more source