Results 51 to 60 of about 391,120 (240)

Chloride Ions: Essential Agents for Achieving Spontaneous Delamination of MXene

Advanced Materials, EarlyView.
This work first identifies chloride ions as essential agents for spontaneous MXene delamination. Without Cl−, etched Ti3C2Tx remains multilayered; with Cl−, interlayer modification enables Li+ intercalation and osmotic swelling. The SPEED process couples HF‐assisted Al extraction, Cl−‐mediated interlayer expansion, and Li+‐driven swelling to produce ...
Sukhyeun Jang, Yong‐Jae Kim, Incheol Jeong, Minju Kim, Jaewoong Lee, Jihan Kim, Ki‐Min Roh, Kang Taek Lee, Seon Joon Kim, Yonghee Lee, Chi Won Ahn, Hee‐Tae Jung   +11 more
wiley   +1 more source

Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

Micromachines, 2015
We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface
Jian Yang, Chaowei Si, Guowei Han, Meng Zhang, Liuhong Ma, Yongmei Zhao, Jin Ning   +6 more
doaj   +1 more source

Sub‐Nanometer Cobalt on Tungsten Titanium Carbide MXene (W2TiC2Tx): An Electrocatalyst for Highly Efficient and Stable Alkaline Hydrogen Evolution at Industrial‐Scale Current Density

Advanced Materials, EarlyView.
A novel W2TiC2Tx MXene prepared through a MAX‐phase route supports sub‐nanometer Co for highly efficient alkaline hydrogen evolution. Strong Co–W interfacial interactions optimize hydrogen adsorption and catalytic activity, enabling low overpotentials of 63 mV at 10 mA cm−2, small Tafel slope of 44.3 mV dec−1, and exceptional durability at industrially
Xiaopeng Liu, Fan Yang, Deep M. Patel, Mohammad Albloushi, Qiqi Mao, Shan Jiang, Christian J. Breckner, Connor W. Schroeder, Ruoyu Cui, Tao Ma, Dapeng Jing, Wenyu Huang, Jeffrey T. Miller, Wenzhen Li, Luke T. Roling, Yue Wu   +15 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Nonoxide Sol-Gel Synthesis of Terbium-Doped Silicon Nitride Phosphors

, 2009
Exposure of solutions of Tb(N(SiMe3)2)3 with SiCl(NEt2)3 in tetrahydrofuran to dry ammonia results in polymeric xerogels. Heating these gels in ammonia leads to amorphous Tb:SiNx phosphors that exhibit bright green luminescence under UV irradiation.
Hector, Andrew L., Hassan, Shereen, Carravetta, Marina, Stebbings, Laura A.   +3 more
core   +1 more source

Spatial‐Compatibility‐Assisted Molecular Intercalation in MXenes

Advanced Materials, EarlyView.
This work demonstrates a solvent–free NH4F–mediated route for simultaneous Al removal and molecular intercalation in MXenes. Intercalants are selected by comparing their crystallographic X, Y, and Z dimensions with the MXene interlayer spacing, establishing a spatial‐compatibility criterion that rationalizes guest–host matching and enables predictive ...
Minhao Sheng, Xiaoqing Bin, Xiangyang Liu, Yingji Zhao, Wenxiu Que, Yusuke Asakura, Yusuke Yamauchi   +6 more
wiley   +1 more source

Formation of AlN Layers at Magnetron Sputtering of Aluminum in Ar + N2 Gas Mixture [PDF]

Журнал нано- та електронної фізики, 2014
The influence of technological parameters, such as discharge power, working gas pressure, growth surface temperature, on the formation mechanisms and main characteristics of aluminum nitride has been investigated in the work. On the basis of optimization
A.S. Kornyushchenko
doaj  

Synthesis and corrosion resistance of Cu-Al-N nanostructured thin films deposited through magnetron sputtering

Materials Research Express, 2021
Cu-Al-N thin films were deposited by means of the unbalanced magnetron cosputtering technique, varying the pulsed DC source power that is associated with the aluminum target.
D M Otálora Barrero, J J Olaya, A Duarte Moller   +2 more
doaj   +1 more source

Controlled Growth of Boron Nitride in Various Phases

Advanced Materials Interfaces, EarlyView.
Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu, Kanghao Xie, Jiajie Qi, Xiaorui Zheng, Kaihui Liu, Xuedong Bai, Li Wang   +6 more
wiley   +1 more source

Preparation and properties of a new high-energy metal (W) film/aluminum nitride system energy exchanger electrothermal pyrogenant

AIP Advances
In order to improve the safety and energy exchange efficiency of electric thermal pyrotechnic devices, a new energy exchange element technology of high energy metal (W) film/aluminum nitride ceramic was explored by taking advantage of the high thermal ...
Mi Zhou, Ming Li, Jie Lei, Jiao Li, Qingying Meng, Yin Wang, Honghai Tong, Minjie Diwu, Guofu Yin   +8 more
doaj   +1 more source