Crystal Engineering as an Efficient Medicinal Chemistry Tool for Animal PK Bioavailability Enhancement in Early Pre-Clinical Research. [PDF]
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Atomic-Scale Mechanisms and Damage Suppression in Nanometric Cutting of Polycrystalline Copper: A Molecular Dynamics Study. [PDF]
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Single-Particle X-ray Scattering Reveals a High Local Supersaturation of Precursors as the Origin of CoO Assembly Formation. [PDF]
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Pressure-induced amorphization and an amorphous–amorphous transition in densified porous silicon
Nature, 2001Crystalline and amorphous forms of silicon are the principal materials used for solid-state electronics and photovoltaics technologies. Silicon is therefore a well-studied material, although new structures and properties are still being discovered. Compression of bulk silicon, which is tetrahedrally coordinated at atmospheric pressure, results in a ...
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Crystalline–amorphous and amorphous–amorphous transitions in phase-change materials
Journal of Non-Crystalline Solids, 2009Abstract The transition from the crystalline state to amorphous state and back has been studied in the particular case of the GeSb2Te4 phase-change material by a computer simulation procedure. Modelling at the nanoscale indicates specific structural characteristics, especially the multiplicity of the amorphous phase as opposite to the uniqueness of ...
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Amorphous–amorphous transition in a porous coordination polymer
Chemical Communications, 2017The amorphous state plays a key role in porous coordination polymer and metal–organic framework phase transitions.
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Abstract Photoinduced characteristics of amorphous (a-) ZnSe thin films at 10 and 300 K have been investigated using real-time photoluminescence (PL) and X-ray diffraction. The structural phase of as-deposited film is evaluated to be predominantly amorphous with uniformly distributed nano-scale crystallites, and the optical energy gap and complex ...
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Hall effect in amorphous Si:H and amorphous Si:H/amorphous Ge:H superlattices
Applied Physics Letters, 1988The sign anomaly in the Hall coefficient observed in substitutionally doped amorphous Si:H and amorphous Ge:H is also found in amorphous Si:H/Ge:H superlattices. The size of the Hall mobility in the superlattice is comparable to the Hall mobility in amorphous Si:H and amorphous Ge:H.
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