Results 201 to 210 of about 12,032 (268)

A Ku-Band 13 W GaN HEMT Power Amplifier MMIC with a Coupled-Line Interstage Stabilization Technique for Radar Sensor Systems. [PDF]

Sensors (Basel)
Kim J.
europepmc   +1 more source

Ultrabroadband on-chip photonics for full-spectrum wireless communications. [PDF]

Nature
Tao Z, Wang H, Feng H, Guo Y, Shen B, Sun D, Tao Y, Han C, He Y, Bowers JE, Shu H, Wang C, Wang X.   +12 more
europepmc   +1 more source

Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide. [PDF]

Nat Commun
Liu M, Niu J, Yang G, Zhao R, Chen K, Lu W, Liao F, Wu Z, Jiang C, Geng D, Lu N, Nathan A, Li L, Li L, Liu M.   +14 more
europepmc   +1 more source

Experimental datasets on intermittency and observability in networks of electronic oscillators. Analogue and hybrid configuration. [PDF]

Data Brief
Vera-Ávila VP, Rivera-Durón RR, Rodríguez-Ornelas JM, Vázquez-Fuentes E, Leyva I, Sevilla-Escoboza JR.   +5 more
europepmc   +1 more source

Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors. [PDF]

Nanomaterials (Basel)
Torres-Sánchez A, Hernandez-Luna IS, Hernández-Cuevas FJ, León-Puertos C, Hernández-Como N.   +4 more
europepmc   +1 more source

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AMPLIFIERS IN MEDICAL ELECTRONICS

Acta Anaesthesiologica Scandinavica, 1962
SUMMARYA brief description of the operation of thermionic valves is given. This leads to the design of multi‐stage amplifiers. Methods are presented for coupling stages of amplifiers required to handle signals of an alternating or direct nature. Some idea is given of the mode of action of transistors, and a comparison drawn between valve and transistor
openaire   +2 more sources

Performance of electron beam-semiconductor amplifiers

IEEE Transactions on Electron Devices, 1971
Experimental results obtained with developmental electron beam-semiconductor devices used as video-pulse and RF pulsed amplifiers are discussed. These devices employ a grid-modulated electron beam to control the current in a semiconductor target. Power gains of 26 dB and peak pulse powers of 40 W were obtained at up to 600 MHz with an untuned output ...
G. Taylor, R. True, H. Wagner
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Transferred electron amplifiers and oscillators

IRE Transactions on Electron Devices, 1961
In some semiconductors the conduction band system has two minima separated by only a small energy, and the lower minimum has associated with it a smaller electron effective mass than the upper minimum. At high electric fields it should be possible to transfer electrons to the upper minimum where they will have a lower mobility.
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Comparison of Hot Electron and Related Amplifiers

1962 International Electron Devices Meeting, 1962
It is proposed that novel amplifiers be compared with each other and with existing amplifiers on the basis of as many figures of merit as are calculable. The bipolar transistor; field-effect transistor; Schottky-emitter, space-charge-limited-emitter, and tunnel-emitter, metal-base, hot-electron amplifiers are compared with respect to frequency cutoff ...
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Harmonic Lasing in a Free-Electron-Laser Amplifier

Physical Review Letters, 2006
A method is demonstrated that allows a planar wiggler high-gain Free-Electron-Laser (FEL) amplifier to lase so that the interaction with an odd harmonic of the radiation field dominates that of the fundamental. This harmonic lasing of the FEL is achieved by disrupting the electron interaction with the usually dominant fundamental while allowing that of
McNeil, B W J, Robb, G.R.M., Poole, M.W., Thompson, N.R.   +3 more
openaire   +4 more sources