Results 281 to 290 of about 3,698,626 (376)
This study presents the BioCLEAR system, a highly transparent and conductive neural electrode array composed of silver nanowires (AgNWs) and doped PEDOT:PSS, enabling neural recordings with minimal optical artifacts. When integrated with a GRIN lens, this cost‐effective neural implant allows simultaneous electrophysiological recording and GCaMP6‐based ...
Dongjun Han +17 more
wiley +1 more source
Normative Data of Sensory and Motor Nerve Conduction Parameters: Gender-based Differences and Effect of Age and Height in Healthy Population of Himachal Pradesh. [PDF]
Parlewar R +9 more
europepmc +1 more source
In this work, a platform based on an Extended‐Gate OECT is successfully developed and tailored for the detection of physiologically relevant chloride ion concentrations in artificial eccrine sweat. Leveraging the extended‐gate architecture, a high‐performance OECT based on inkjet‐printed pg2T‐TT is coupled with an inkjet‐printed Ag/AgCl electrode ...
Cristiano Bortolotti +7 more
wiley +1 more source
Low frequency detection in clinical multispectral optoacoustic tomography. [PDF]
Bader M +3 more
europepmc +1 more source
Multiband Carrierless Amplitude Phase Modulation for High Capacity Optical Data Links
M. I. Olmedo +6 more
semanticscholar +1 more source
The coordination in carbonate solvents and degradation products of lithium difluoro(oxolato) borate (LiDFOB) salt enables sufficient passivation of both LiNi0.8Mn0.1Co0.1O2 (NMC811) cathode and graphite anode in the absence of ethylene carbonate (EC).
Thomas J. Watts +2 more
wiley +1 more source
Heath components of objective accommodative responses for convergence insufficiency participants compared with those with binocularly normal vision. [PDF]
Fine SN +6 more
europepmc +1 more source
C. Möller-Levet +10 more
semanticscholar +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source

