Results 201 to 210 of about 4,024,996 (234)

A High-PSRR LDO with Low Noise and Ultra-Low Power Consumption. [PDF]

Micromachines (Basel)
Guo N, Cheng J, Yue C, Chen C, Liu C, Dong L.   +5 more
europepmc   +1 more source

Real-Time Monitoring Method and Circuit Based on Built-In Reliability Prediction. [PDF]

Micromachines (Basel)
Ren W, Chen Y, Li X, Zhou X, Song B, Chang T.   +5 more
europepmc   +1 more source

Advanced smartwatch for noninvasive sweat biomarker monitoring using a wearable FET biosensor array with Ag nanowire cross-linked MoS₂ and MXene. [PDF]

Sci Rep
Farahmandpour M, Dideban D, Dehbali MM, Kordrostami Z.   +3 more
europepmc   +1 more source

Adaptive E-Nose: Integrating New Gas Sensors for Emerging Applications. [PDF]

Sensors (Basel)
Gyeltshen N, Sanchis AG, Jagannath N, Radaliyagoda S, Tobgay S, Hossain MF, Munasinghe K.   +6 more
europepmc   +1 more source

Multimodal, wearable sensors with tactile communication capabilities for human and robotic applications. [PDF]

Device
Uzunoglu BE, Ojuade O, Hepler K, Aleem M, Kaveti R, Kathpalia K, Su K, Sahin B, Misra V, Dhong C, Hsiao LC, Bandodkar AJ.   +11 more
europepmc   +1 more source

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Potential of MOS Technologies for Analog Integrated Circuits

IEEE Journal of Solid-State Circuits, 1978
Reviews the rapid progress in MOS analog circuit techniques over the past three years, and attempts to estimate the near-term attainable characteristics of MOS LSI circuits which incorporate both analog and digital functions.
R W Brodersen, P R Gray, D A Hodges
exaly   +2 more sources

Statistical Modeling of Device Mismatch for Analog MOS Integrated Circuits

IEEE Journal of Solid-State Circuits, 1992
A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described. Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device ...
C Michael
exaly   +2 more sources

Behavior of Analog MOS Integrated Circuits at High Temperatures

IEEE Journal of Solid-State Circuits, 1985
Thermal effects on small-signal characteristics of MOS transistors are studied and parameters of MOS amplifiers operating at high temperatures are calculated. The predicted performance has been experimentally verified and high-temperature measurements of an operational amplifier and a switched-capacitor precision amplifier are presented.
B J Hosticka, G Zimmer
exaly   +2 more sources

Design Considerations in Single-Channel MOS Analog Integrated Circuits-a Tutorial

IEEE Journal of Solid-State Circuits, 1978
The design of single-channel MOS analog integrated circuits is discussed. Simple models are presented and approximate design equations are given for basic analog cells. The emphasis is on first-order analysis as a starting point for computer-aided design.
Y P Tsividis
exaly   +2 more sources